TIC253 Bourns, Inc., TIC253 Datasheet
TIC253
Manufacturer Part Number
TIC253
Description
Tic253 Series Silicon Triacs
Manufacturer
Bourns, Inc.
Datasheet
1.TIC253.pdf
(3 pages)
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absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
electrical characteristics at 25°C case temperature (unless otherwise noted )
† All voltages are with respect to Main Terminal 1.
NOTE
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
I
V
V
DRM
GT
GT
T
●
●
●
●
●
●
R O D U C T
High Current Triacs
20 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
150 A Peak Current
Max I
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
4: This parameter must be measured using pulse techniques, t
PARAMETER
Repetitive peak
off-state current
Gate trigger
current
Gate trigger
voltage
On-state voltage
the rate of 500 mA/°C.
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
the current carrying contacts are located within 3.2 mm from the device body.
GT
of 50 mA (Quadrants 1 - 3)
I N F O R M A T I O N
V
V
V
V
V
V
V
V
V
I
T
D
supply
supply
supply
supply
supply
supply
supply
supply
= ±28.2 A
= Rated V
= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†
RATING
DRM
I
R
R
R
R
R
R
R
R
I
TEST CONDITIONS
G
G
L
L
L
L
L
L
L
L
= 0
= 50 mA
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
p
= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
MT1
MT2
G
Pin 2 is in electrical contact with the mounting base.
T
t
t
t
t
t
t
t
t
(see Note 4)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
TIC253M
TIC253D
TIC253S
TIC253N
C
= 110°C
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
SOT-93 PACKAGE
SYMBOL
(TOP VIEW)
I
T(RMS)
V
I
T
I
TSM
T
DRM
GM
T
stg
C
L
1
3
2
MIN
SILICON TRIACS
TYP
±1.4
-0.8
-0.8
-40 to +110
-40 to +125
-30
-20
0.8
0.8
15
32
TIC253 SERIES
VALUE
400
600
700
800
150
230
±1
20
MAX
±1.7
-50
-50
±2
50
-2
-2
2
2
MDC2ADA
UNIT
UNIT
mA
mA
°C
°C
°C
V
A
A
A
V
V
1
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TIC253 Summary of contents
Page 1
... V† p( Ω = -12 V† p( (see Note ≤ 1 ms, duty cycle ≤ Voltage-sensing contacts separate from p TIC253 SERIES SILICON TRIACS SOT-93 PACKAGE (TOP VIEW SYMBOL VALUE 400 600 V DRM 700 800 I 20 T(RMS) ...
Page 2
... TIC253 SERIES SILICON TRIACS electrical characteristics at 25°C case temperature (unless otherwise noted) (continued) PARAMETER V supply I Holding current H V supply V supply I Latching current L V supply Critical rate of rise of dv/ Rated V D off-state voltage Critical rise Rated V D dv/dt (c) commutation voltage di/dt = 0.5 I Critical rate of rise of ...
Page 3
... DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TYPICAL CHARACTERISTICS TC10AD 1000 100 100 100 120 -60 -40 TIC253 SERIES SILICON TRIACS LATCHING CURRENT vs CASE TEMPERATURE I supply GTM + - V = ± -20 0 ...