EGF10A Extensive Technology Ind. Co., Ltd., EGF10A Datasheet - Page 2

• Manufacturer Part Number: EGF10A
• Description: Egf10a 1.0a Smd Sintered Glass Passivated Junction Ultra Fast Recovery Rectifiers - 50v To 1000v
• Manufacturer: Extensive Technology Ind. Co., Ltd.

0.001
0.01
100
0.8
0.6
1.2
1.0
0.4
0.2
10
0.1
10
1
1
0
Instantaneous Forward Voltage (Volts)
0
0.1
Fig.1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneour Forward
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Fig. 5 - Typical Junction Capacitance
single phase half wave 60Hz
resistive or inductive load
T
J
=25°C
25
0.2
Reverse Voltage (Volts)
EGF10G
Lead Temperature ( °C)
50
EGF10A-EGF10D
0.4
1.0
Characteristics
勖昇科技股份有限公司
Extensive Technology
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0.6
75
pulse width =300µS
1% duty cycle
100
10
0.8
EGF10J-EGF10M
125
1.0
T
f=1.0MHz
Vsig=50mVp-p
J
=25°C
100
1.2
150
1.4
175
Page 2
+
-
Note: 1. rise time=7nS Max. input impedance=1MΩ, 22pF
Fig. 6 - Test Circuit Diagram and Reverse
50Ω
noninductive
25V
(approx)
1000
Rating and Characteristic Curves
100
dc
40
30
20
10
10
0.1
0
1
0
2. rise time=10nS Max. source impedance=80Ω
1
EGF10A thru EGF10M
Fig. 4 - Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage ( %)
Fig. 2 - Maximum Non-Repetitive Peak
Recovery Time Characteristic
1Ω
non
inductive
T
2
J
Number of Cycles at 60 Hz
=25°C
20
10Ω
noninductive
Forward Surge Current
oscilloscope
(note 1)
EGF10K ~ EGF10M
EGF10A ~ EGF10J
pulse
generator
(note 2)
5
40
-
+
10
T
8.3ms single half sine
wave (JEDEC Method)
A
=55°C
T
-0.25A
60
-1.0A
0.5A
J
=100°C
0
0
20
5
Trr
10
time, t(nS)
80
T
J
15
=125°C
50
20
Rev. A
25
100
100
30