ES6U42 ROHM Co. Ltd., ES6U42 Datasheet - Page 5

• Manufacturer Part Number: ES6U42
• Description: 2.5v Drive Pch Sbd Mosfet
• Manufacturer: ROHM Co. Ltd.

ES6U42
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and
2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
○
c
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Measurement circuit
Notice
increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low V
temperature, generating heat of MOSFET and the reverse current.
protection circuit.
2009 ROHM Co., Ltd. All rights reserved.
Fig.1-1 Switching Time Measurement Circuit
Fig.2-1 Gate Charge Measurement Circuit
I
G(Const.)
R
G
R
G
V
GS
V
F
GS
characteristics and therefore, higher leak current. Please consider enough the surrounding
I
D.U.T.
D
I
D
D.U.T.
R
V
L
DD
R
V
L
DD
V
DS
V
DS
5/5
V
V
GS
DS
V
t
GS
d(on)
V
Fig.1-2 Switching Waveforms
FIg.2-2 Gate Charge Waveform
G
Q
gs
10%
t
50%
on
90%
Pulse Width
t
Q
10%
r
gd
Q
g
90%
t
d(off)
Charge
t
off
50%
10%
tf
90%
2009.01 - Rev.A
Data Sheet