BGA2001 NXP Semiconductors, BGA2001 Datasheet - Page 2

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BGA2001

Manufacturer Part Number
BGA2001
Description
Silicon Mmic Amplifier
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin dual-emitter SOT343R
package.
QUICK REFERENCE DATA
1999 Aug 11
V
I
MSG
NF
S
SYMBOL
Low current, low voltage
Very high power gain
Low noise figure
Integrated temperature compensated biasing
Supply and RF output pin combined.
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors
Low noise amplifiers
Satellite television tuners (SATV)
High frequency oscillators.
S
Silicon MMIC amplifier
DC supply voltage
DC supply current
maximum stable gain
noise figure
PARAMETER
RF input AC coupled
V
V
T
V
amb
VS-OUT
VS-OUT
VS-OUT
= 25 C
= 2.5 V; RF input AC coupled
= 2.5 V; f = 1.8 GHz;
= 2.5 V; f = 1.8 GHz;
CONDITIONS
2
PINNING
handbook, halfpage
Marking code: A1.
Fig.1 Simplified outline (SOT343R) and symbol.
PIN
1
2
3
4
3
2
Top view
S
=
GND
RF in
GND
V
S
opt
+ RFout
4
1
4.5
19.5
1.3
MAM430
TYP.
DESCRIPTION
CIRCUIT
Product specification
BIAS
RFin
4.5
MAX.
BGA2001
V S +RFout
GND
V
mA
dB
dB
UNIT

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