CEM3060 Chino-Excel Technology Co., Ltd., CEM3060 Datasheet - Page 2

• Manufacturer Part Number: CEM3060
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino-Excel Technology Co., Ltd.

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Parameter
c
d
d
b
c
T
A
= 25 C unless otherwise noted
R
Symbol
V
BV
t
t
C
V
C
Q
I
I
GS(th)
DS(on)
C
d(on)
d(off)
Q
I
GSSF
GSSR
Q
I
t
DSS
t
SD
oss
iss
rss
gd
S
r
f
gs
g
DSS
2
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
GS
DS
DD
GS
DS
GS
GS
Test Condition
= 0V, I
= 30V, V
= 20V, V
= -20V, V
= V
= 10V, I
= 4.5V, I
= 15V, V
= 15V, I
= 10V, R
= 15V, I
= 5V
= 0V, I
DS
, I
D
S
D
D
D
D
= 250 µ A
= 2A
D
GS
GEN
GS
DS
DS
= 14A,
= 250 µ A
= 14A
= 1A,
=14A
= 0V,
= 0V
= 0V
= 0V
= 6Ω
Min
30
1
CEM3060
2470
Typ
325
185
6.5
8.5
17
50
10
16
5
5
3
Max
-100
11.5
100
100
7.8
1.3
35
10
20
20
14
1
3
Units
mΩ
mΩ
nA
nA
nC
nC
nC
µ A
pF
pF
pF
ns
ns
ns
ns
V
V
A
V