XP131A1235SR TOREX SEMICONDUCTOR LTD., XP131A1235SR Datasheet - Page 2

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XP131A1235SR

Manufacturer Part Number
XP131A1235SR
Description
N-channel Power Mosfet
Manufacturer
TOREX SEMICONDUCTOR LTD.
Datasheet

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■ELECTRICAL CHARACTERISTICS
DC Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Drain-Source On-State Resistance *
* Effective during pulse test.
Forward Transfer Admittance *
XP131A1235SR
Gate-Source Cut-Off Voltage
Gate-Source Leak Current
Feedback Capacitance
( channel-ambience )
Drain Cut-Off Current
Turn-On Delay Time
Output Capacitance
Turn-Off Delay Time
Thermal Resistance
Input Capacitance
Body Drain Diode
Forward Voltage
PARAMETER
PARAMETER
PARAMETER
PARAMETER
Rise Time
Fall Time
Rth (ch-a)
SYMBOL
SYMBOL
SYMBOL
SYMBOL
td ( on )
td ( off )
Rds(on)
Vgs(off)
Coss
Crss
| Yfs |
Ciss
Idss
Igss
tr
tf
Vf
Implement on a glass epoxy
Vds = 10V , Vgs = 0V
Vgs=±12V, Vds=0V
Vgs = 5V , Id = 4A
Vds=20V, Vgs=0V
Id=1mA, Vds=10V
Id=4A, Vds=4.5V
Id=4A, Vgs=2.5V
Id=4A, Vds=10V
If=7A, Vgs=0V
CONDITIONS
CONDITIONS
CONDITIONS
CONDITIONS
Vdd = 10V
resin PCB
f = 1MHz
MIN.
MIN.
MIN.
MIN.
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.025
0.035
TYP.
0.85
TYP.
TYP.
TYP.
760
430
200
16
10
20
55
15
50
-
-
-
0.035
0.048
MAX.
MAX.
MAX.
MAX.
±1
1.2
1.1
10
-
-
-
-
-
-
-
-
-
T
T
T
a = 25℃
a = 25℃
a = 25℃
UNITS
UNITS
UNITS
UNITS
℃/W
μA
μA
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
V
S
V

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