RN47A4JE TOSHIBA Semiconductor CORPORATION, RN47A4JE Datasheet - Page 2

• Manufacturer Part Number: RN47A4JE
• Description: Toshiba Transistor Silicon Npn?pnp Epitaxial Type Pct Process Bias Resistor Built-in Transistor
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Maximum Ratings
Maximum Ratings
Maximum Ratings
Note: Total rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Characteristics
Characteristics
Characteristics
(Ta = 25°C) (Q1)
(Ta = 25°C) (Q2)
(Ta = 25°C) (Q1, Q2 common)
Symbol
Symbol
Symbol
V
V
V
V
V
V
P
T
CBO
CEO
EBO
CBO
CEO
EBO
C
I
I
T
stg
C
C
j
(Note)
− 55~150
Rating
Rating
Rating
− 100
100
− 50
− 50
100
150
50
50
10
− 6
2
Unit
Unit
Unit
mW
mA
mA
°C
°C
V
V
V
V
V
V
RN47A4JE
2004-07-01