PEMZ1 NXP Semiconductors, PEMZ1 Datasheet - Page 3
PEMZ1
Manufacturer Part Number
PEMZ1
Description
Npn/pnp General Purpose Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.PEMZ1.pdf
(8 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Nov 07
R
Per transistor; for the PNP transistor with negative polarity
I
I
h
V
f
C
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
th j-a
c
NPN/PNP general purpose transistors
= 25 C; unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
transition frequency
collector capacitance
TR1 (NPN)
TR2 (PNP)
p
300 s;
PARAMETER
PARAMETER
0.02.
V
V
V
V
I
I
I
C
C
E
CB
CB
EB
CE
= i
= 50 mA; I
= 2 mA; V
= 30 V; I
= 30 V; I
= 4 V; I
= 6 V; I
e
= 0; V
3
CONDITIONS
C
C
notes 1 and 2
CE
CB
B
E
E
= 0
= 1 mA
= 0
= 0; T
= 5.0 mA; note 1
= 12 V; f = 100 MHz 100
= 12 V; f = 1 MHz
CONDITIONS
j
= 150 C
120
MIN.
VALUE
416
TYP.
Product specification
100
10
100
200
1.5
2.2
MAX.
PEMZ1
UNIT
K/W
nA
nA
mV
MHz
pF
pF
UNIT
A