GI70L02 E-Tech Electronics LTD, GI70L02 Datasheet - Page 2

• Manufacturer Part Number: GI70L02
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: E-Tech Electronics LTD

Electrical Characteristics (Tj = 25 : : : : unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Forward On Voltage
Continuous Source Current (
Pulsed Source Current (
Drain-Source Avalanche Ratings
Single Pulse Avalanche Energy
Avalanche Current
Notes: 1. Pulse width limited by safe operating area.
G
I
70L02
2. Pulse width 300us, duty cycle 2%.
Parameter
Parameter
Parameter
2
2
2
Body Diode
Body Diode
)
150 :
1
1
)
)
Symbol
R
Symbol
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
E
GSS
DSS
I
DSS
g
Q
d(on)
d(off)
I
T
T
SM
I
AR
oss
DSS
iss
rss
SD
AS
fs
gs
gd
S
g
r
f
/
Tj
Min.
Min.
Min.
1.0
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.037
Typ.
Typ.
Typ.
790
475
195
8.8
28
23
17
95
24
14
3
-
-
-
-
-
-
-
-
-
-
-
-
Max.
±100
Max.
Max.
1.26
210
3.0
25
18
66
61
35
1
9
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V/ :
Unit
Unit
m
nA
uA
uA
nC
mJ
pF
ns
V
V
S
V
A
A
A
V
Reference to 25 : , I
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
I
V
V
L=100uH, V
D
D
S
GS
DS
DS
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
DS
G
D
D
DD
=33A
=33A
=66A, V
=0.45
=V
=3.3
=0, I
=V
=10V, I
= ±20V
=25V, V
=20V, V
=10V, I
=4.5V, I
=20V
=5V
=15V
=10V
=0V
=25V
=25V, I
Test Conditions
Test Conditions
G
Test Conditions
ISSUED DATE :2005/02/23
REVISED DATE :2005/12/02B
GS
=0V, V
D
, I
=250uA
GS
D
D
D
D
D
GS
GS
GS
=33A
=33A
=250uA
=35A,
=0V, Tj=25 :
=20A
S
=0
=0
=10V
=1.26V
Page: 2/5
D
=1mA