IMB3A ROHM Co. Ltd., IMB3A Datasheet - Page 2

• Manufacturer Part Number: IMB3A
• Description: General Purpose Dual Digital Transistors
• Manufacturer: ROHM Co. Ltd.

Transistors
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Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
Absolute maximum ratings (Ta = 25°C)
Electrical characteristics (Ta = 25°C)
Electrical characteristic curves
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Transition frequency of the device
500
200
100
Fig.1 DC current gain vs. collector
50
20
10
1k
−100µ
5
2
1
−200µ
COLLECTOR CURRENT : I
current
−500µ
Parameter
Ta=100°C
−1m
−40°C
Parameter
25°C
−2m
EMB3,UMB3N
IMB3A
−5m
−10m
−20m
C
V
(A)
CE
=−5V
−50m −100m
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
Symbol
BV
BV
BV
V
I
I
CE (sat)
h
CBO
EBO
R
f
FE
CBO
CEO
T
EBO
1
−500m
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
Fig.2 Collector-emitter saturation
−100µ
−1
150 (TOTAL)
300 (TOTAL)
−55 to +150
Min.
3.29
−50
−50
100
−200µ
−5
Limits
−
−
−
−
−100
voltage vs. collector current
−50
−50
150
COLLECTOR CURRENT : I
−5
−500µ
Typ.
Ta=100°C
250
250
−1m
4.7
−
−
−
−
−
−
−40°C
25°C
−2m
−5m
Max.
−0.5
−0.5
−0.3
6.11
600
−
−
−
−
Unit
mW
−10m
mA
°C
°C
V
V
V
−20m
C
l
MHz
C
(A)
Unit
kΩ
/l
µA
µA
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∗
V
V
V
V
−
B
−50m −100m
=20
EMB3 / UMB3N / IMB3A
1
2
I
I
I
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
=−50µA
=−1mA
=−50µA
/I
B
=−4V
=−50V
=−5V, I
=10mA, I
=−5mA/−2.5mA
C
=−1mA
E
Conditions
=−5mA, f=100MHz
Rev.B
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2/2
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