EFC060B Excelics Semiconductor, Inc., EFC060B Datasheet
EFC060B
Manufacturer Part Number
EFC060B
Description
Low Distortion Gaas Power Fet
Manufacturer
Excelics Semiconductor, Inc.
Datasheet
1.EFC060B.pdf
(2 pages)
ELECTRICAL CHARACTERISTICS (T
MAXIMUM RATINGS AT 25
Note: 1. Exceeding any of the above ratings may result in permanent damage.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
SYMBOLS
SYMBOLS
Gm
P
G
Vp
BVgd
BVgs
Rth
Idss
PAE
1dB
1dB
LINEARITY AND RELIABILITY
+25.0dBm TYPICAL OUTPUT POWER
10.5dB TYPICAL POWER GAIN AT 12GHz
HIGH BVgd FOR 10V BIAS
0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
Si
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
Idss SORTED IN 10mA PER BIN RANGE
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
2. Exceeding any of the above ratings may reduce MTTF below design goals.
3
N
4
PASSIVATION
Excelics
Output Power at 1dB Compression
Vds=10V, Ids=50% Idss
Gain at 1dB Compression
Vds=10V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=10V, Idss=50% Idss
Saturated Drain Current Vds=3V, Vgs=0V
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
PARAMETERS
PARAMETERS/TEST CONDITIONS
PRELIMINARY DATA SHEET
O
C
Vds=3V, Ids=1.5mA
Vds=3V, Vgs=0V
ABSOLUTE
14V
-8V
Idss
15mA
23dBm
175
-65/175
1.8W
a
= 25
Low Distortion GaAs Power FET
o
C
o
f=12GHz
f=18GHz
f=12GHz
f=18GHz
O
C
f=12GHz
C)
1
MIN
23.0
-15
-10
9.0
CONTINUOUS
80
50
10V
-4.5V
150mA
2.5mA
@ 3dB Compression
150
-65/150
1.5W
40
Chip Thickness: 75
All Dimensions In Microns
o
C
EFC060B
95
S
TYP
25.0
25.0
10.5
o
-2.5
130
-20
-17
8.0
70
C
35
75
350
50
50
D
G
MAX
S
180
-4.0
13 microns
2
48
100
UNIT
o
350
dBm
C/W
mA
mS
dB
V
V
V
%
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EFC060B Summary of contents
Page 1
... C) a f=12GHz f=18GHz f=12GHz f=18GHz f=12GHz Vds=3V, Vgs=0V Vds=3V, Ids=1.5mA ABSOLUTE 14V -8V Idss 15mA 23dBm o 175 C o -65/175 C 1.8W EFC060B 350 350 100 Chip Thickness microns All Dimensions In Microns MIN TYP MAX UNIT 23.0 25.0 dBm 25.0 9.0 10 ...
Page 2
... EFC060B S22 S22 Mag Ang 0.568 -9.8 0.553 -19.6 0.524 -28.6 0.492 -36.9 0.446 -45.2 0.418 -52.3 0.398 -59.4 0.380 -67.9 0.374 -78.0 0.384 -86.9 0.395 -93.9 0.409 -100.1 0.415 -106.5 0.426 -113.9 0.435 -119.9 0.439 -124.7 0.432 -131.7 0.422 -141.5 ...