VTO110 IXYS Corporation, VTO110 Datasheet - Page 2

• Manufacturer Part Number: VTO110
• Description: Three Phase Full Controlled Rectifier Bridge, B6c
• Manufacturer: IXYS Corporation

Symbol
I
V
V
r
V
I
V
I
I
I
t
R
R
d
d
a
© 2000 IXYS All rights reserved
R
GT
GD
L
H
gd
T
Dimensions in mm (1 mm = 0.0394")
S
A
F
T0
GT
GD
, I
thJC
thJH
, V
2.8 x 0.8
D
T
M6
C ~
3
2
1
Test Conditions
V
I
For power-loss calculations only
(T
V
V
T
T
I
di
T
T
I
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
F
G
G
VJ
VJ
VJ
VJ
R
, I
D
D
G
A +
VJ
= 0.3 A; t
= 0.3 A; di
26
12
/dt = 0.3 A/ms
= V
= 6 V;
= 6 V;
T
= T
= T
= 25°C; V
= 25°C; V
= 125°C)
= 200 A, T
D ~
RRM
94
80
72
25
66
VJM
VJM
; V
;
;
B -
26
G
D
G
= 30 ms
D
D
/dt = 0.3 A/ms
= V
7
T
T
T
T
V
V
E ~
= 6 V; R
= 1/2 V
VJ
4
5
6
VJ
VJ
VJ
VJ
D
D
DRM
= 2/3 V
= 2/3 V
= 25°C
= 25°C
= -40°C
= 25°C
= -40°C
DRM
M6x10
GK
DRM
DRM
T
T
T
= ¥
VJ
VJ
VJ
= T
= 25°C
= 25°C
Fig. 3 Surge overload current
I
VJM
FSM
900
800
700
600
500
400
300
200
100
A
10
I
FSM
-3
VTO 110
T
T
£
£
£
£
£
£
£
£
£
£
£
£
: Crest value, t: duration
VJ
VJ
VTO 110
= 125°C
= 45°C
0.108
0.133
1.75
0.85
0.65
10
0.8
Characteristic Values
-2
6
100
200
450
200
0.3
1.5
1.6
0.2
9.4
10
50
10
5
5
2
VTO 175
-1
0.077
0.092
1.57
0.85
0.46
0.55
3.5
50 Hz
80% V
10
0
t
RRM
m/s
K/W
K/W
K/W
K/W
mm
mm
s
mW
mA
mA
mA
mA
mA
mA
mA
ms
V
V
V
V
V
2
10
1
Z
Fig. 2
Fig. 4 Transient thermal impedance
Fig. 1 Gate trigger characteristics
I
thJC
dAV
V
K/W
G
120
100
0.1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
80
60
40
20
V
A
1
0
10
1
0
junction to case (per leg)
-3
1: I
2: I
3: I
DC output current at case
VTO 110
I
temperature
GD
VTO 110
GT
GT
GT
, T
, T
, T
, T
VJ
10
VJ
VJ
VJ
10
= 125°C
= 125°C
= 25°C
= -40°C
-2
1
50
100
10
2
-1
VTO 110
VTO 175
3
4: P
5: P
6: P
100
4
I
1000
G
10
GAV
GM
GM
T
C
0
= 5 W
= 10 W
= 0.5 W
t
°C
s
5
2 - 2
mA
6
150
10
1