M29W400DB-55N1 STMicroelectronics, M29W400DB-55N1 Datasheet
M29W400DB-55N1
Manufacturer Part Number
M29W400DB-55N1
Description
Manufacturer
STMicroelectronics
Datasheet
1.M29W400DB-55N1.pdf
(38 pages)
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Part Number:
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FEATURES SUMMARY
June 2004
SUPPLY VOLTAGE
–
ACCESS TIME: 45, 55, 70ns
PROGRAMMING TIME
–
11 MEMORY BLOCKS
–
–
PROGRAM/ERASE CONTROLLER
–
ERASE SUSPEND and RESUME MODES
–
UNLOCK BYPASS PROGRAM COMMAND
–
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
–
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
–
–
–
PACKAGES
–
–
V
and Read
10µs per Byte/Word typical
1 Boot Block (Top or Bottom Location)
2 Parameter and 8 Main Blocks
Embedded Byte/Word Program
algorithms
Read and Program another Block during
Erase Suspend
Faster Production/Batch Programming
Standby and Automatic Standby
Manufacturer Code: 0020h
Top Device Code M29W400DT: 00EEh
Bottom Device Code M29W400D: 00EFh
Compliant with Lead-Free Soldering
Processes
Lead-Free Versions
CC
= 2.7V to 3.6V for Program, Erase
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Figure 1. Packages
3V Supply Flash Memory
TFBGA48 (ZA)
TFBGA48 (ZE)
TSOP48 (N)
12 x 20mm
SO44 (M)
6 x 9mm
6 x 8mm
M29W400DB
M29W400DT
FBGA
FBGA
1/38
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