MRF21030 Motorola, MRF21030 Datasheet

MRF21030

Manufacturer Part Number

MRF21030

Description

Manufacturer

Motorola

Datasheets

1.MRF21030.pdf (8 pages)

2.MRF21030.pdf (8 pages)

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Motorola, Inc. 2001

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field Effect Transistors

N–Channel Enhancement–Mode Lateral MOSFETs

2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications. To be used in class AB for PCN–PCS/cellular radio and WLL

applications.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ESD PROTECTION CHARACTERISTICS

RF DEVICE DATA

REV 3

Drain–Source Voltage

Gate–Source Voltage

Total Device Dissipation @ T C = 25 C

Storage Temperature Range

Operating Junction Temperature

Human Body Model

Machine Model

Thermal Resistance, Junction to Case

Designed for PCN and PCS base station applications from frequencies up to

Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts

High Gain, High Efficiency and High Linearity

Integrated ESD Protection

Ease of Design for Gain and Insertion Phase Flatness

Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW

Output Power

Excellent Thermal Stability

Characterized with Series Equivalent Large–Signal Impedance Parameters

Derate above 25 C

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Output Power — 3.5 Watts

Power Gain — 14 dB

Efficiency — 15%

Test Conditions

Characteristic

Rating

Symbol

V DSS

R JC

V GS

T stg

P D

T J

MRF21030S

LATERAL N–CHANNEL

MRF21030

RF POWER MOSFETs

CASE 465E–02, STYLE 1

CASE 465F–02, STYLE 1

2.2 GHz, 30 W, 28 V

– 65 to +200

M3 (Typical)

2 (Typical)

+15, –0.5

(MRF21030S)

(MRF21030)

Value

Class

MRF21030 MRF21030S

83.3

0.48

Max

200

2.1

Order this document

by MRF21030/D

Watts

W/ C

Unit

Vdc

C/W

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