MT41J128M8HX-15E Micron Semiconductor Products, MT41J128M8HX-15E Datasheet - Page 7
MT41J128M8HX-15E
Manufacturer Part Number
MT41J128M8HX-15E
Description
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT41J128M8HX-15E.pdf
(180 pages)
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1Gb: x4, x8, x16 DDR3 SDRAM
List of Figures
Figure 113: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4. . . . . . . . . . . . . 165
Figure 114: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4. . . . . . . . . . . . . 165
Figure 115: Synchronous ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
Figure 116: Synchronous ODT (BC4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Figure 117: ODT During READs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Figure 118: Asynchronous ODT Timing with Fast ODT Transition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Figure 119: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry . . . . 174
Figure 120: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit. . . . . . 176
Figure 121: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping . . . . . . . . . 178
Figure 122: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping. . . . . . . . . 179
PDF: 09005aef826aa906/Source: 09005aef82a357c3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
7
1Gb_DDR3_LOF.fm - Rev C 1/31/08 EN
©2006 Micron Technology, Inc. All rights reserved.
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