MA3X716 Panasonic, MA3X716 Datasheet
MA3X716
Manufacturer Part Number
MA3X716
Description
Manufacturer
Panasonic
Datasheet
1.MA3X716.pdf
(3 pages)
Schottky Barrier Diodes (SBD)
MA3X716
Silicon epitaxial planar type
For switching
For wave detection
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: February 2005
• Two MA3X704A (MA704A) is contained in one package
• Low forward voltage V
• Optimum for high frequency rectification because of its short
Detection efficiency
Reverse voltage
Maximum peak reverse voltage
Peak forward current
Forward current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
(series connection)
reverse recovery time (t
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
3. Absolute frequency of input and output is 2 GHz.
and the leakage of current from the operating equipment.
Parameter
Parameter
Single
Series
Single
Series
*
Pulse Generator
(PG-10N)
R
F
s
, optimum for low voltage rectification
= 50 Ω
rr
Bias Application Unit (N-50BU)
)
(MA716)
A
Symbol
V
I
T
V
T
FM
I
RM
stg
F
R
a
j
Symbol
= 25°C ± 3°C
Wave Form Analyzer
(SAS-8130)
R
V
V
i
C
I
t
η
a
= 50 Ω
R
rr
F1
F2
t
= 25°C
−55 to +125
Rating
150
110
125
30
30
30
20
I
I
V
V
I
I
V
R
F
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
L
R
R
IN
= 1 mA
= I
= 30 mA
= 1 mA, R
SKH00076DED
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
R
= 10 mA
(peak)
V
Unit
mA
mA
R
°C
°C
V
V
Conditions
L
t
= 100 Ω
4. * : t
r
, f = 30 MHz
L
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 10 pF
= 0.35 ns
= 2 µs
t
p
rr
measurement circuit
t
Marking Symbol: M1U
Internal Connection
EIAJ: SC-59
I
F
10˚
I
I
R
Output Pulse
F
R
L
= 10 mA
= 10 mA
= 100 Ω
(0.95) (0.95)
1
2.90
t
I
1.9
rr
rr
= 1 mA
+0.20
–0.05
±0.1
Min
0.40
3
t
2
+0.10
–0.05
1
Typ
1.5
1.0
65
3
2
Mini3-G1 Package
Max
0.4
1.0
1
0.16
1: Anode 1
2: Cathode 2
3: Cathode 1
+0.10
–0.06
Anode 2
Unit: mm
Unit
µA
pF
ns
%
V
1
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MA3X716 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA3X716 (MA716) Silicon epitaxial planar type For switching For wave detection ■ Features • Two MA3X704A (MA704A) is contained in one package (series connection) • Low forward voltage V , optimum for low voltage rectification F • Optimum for high frequency rectification because of its short ...
Page 2
... MA3X716 75°C 25° 125°C −20° −1 10 − 0.2 0.4 0.6 0.8 1.0 1 Forward voltage V F −1 10 −2 10 − 120 160 200 ( °C ) Ambient temperature V ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...