IRF8910 International Rectifier Corp., IRF8910 Datasheet

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... Notes  through are on page 10 … www.irf.com V R DSS 13.4m @V 20V Top View @ 10V GS @ 10V GS Typ. ––– fg ––– IRF8910 HEXFET Power MOSFET max I DS(on 10V 10A SO-8 Max. Units 20 V ± 8 ...

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Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

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PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25° ...

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0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C ...

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Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 ...

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125°C 10. 25°C 0. GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V L DRIVER V DS D.U ...

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D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 15. Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V ...

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Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ...

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SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...

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SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...