... Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A Features Satisfactory foward current transfer ratio h characteristics Wide area of safe operation (ASO) High transition frequency f T Optimum for the output stage of a HiFi audio amplifier ...
... Non repetitive pulse T =25˚ t=10ms 10 C 100ms 0.3 0.1 0.03 0. 100 300 1000 Collector to emitter voltage 2SD1975, 2SD1975A I — = 25˚C 100˚C T =–25˚ Base to emitter voltage — ...
... Ta=25˚C and under natural convection. th (1) P =10V 0.3A (3W) and without heat sink T (2) P =10V 1.0A (10W) and with a 100 T 1000 100 10 1 0.1 –4 –3 –2 – Time — t th(t) 100 2mm Al heat sink (1) ( 2SD1975, 2SD1975A 4 3 ...
... B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may ap- pear in this material. ...