ESD0P4RFL Infineon Technologies, ESD0P4RFL Datasheet - Page 5

• Manufacturer Part Number: ESD0P4RFL
• Manufacturer: Infineon Technologies

Specifications of ESD0P4RFL

• Packages: TSLP-4-7
• Vesd(min)(iec61000-4-2 Contact): 15.0 kV
• Vrwm: 50.0 V
• Ct, Cl @ 0v: 0.4 pF
• Ir (typ): 100.0 nA
• Ipp @ Tp=8/20µs: 5.0 A

1. Application example ESD0P4RFL
1 RF signal channel, anti-parallel configuration
2. Application example ESD0P4RFL
1 RF signal channel, rail-to-rail configuration
+Vcc
superimposed DC voltage up to
superimposed DC voltage up to
±V
1 protected signal line,
1 protected signal line,
F
+Vcc (voltage supply)
(diode forward volatge)
Line to ground capacitance
Line to ground capacitance
0.4 pF @1 GHz
0.4 pF @1 GHz
I/O
I/O
5
sensitive
sensitive
circuit
circuit
ESD
ESD
The protection diode should be
placed very close to the location
where the ESD or other transients
can occur to keep loops and
inductances as small as possible.
Grounded pins should be
connected in parallel directly to a
ground plane on the board.
Cathode of one diode should be
connected to the positive supply
voltage +Vcc and anode of the
opposite diode should be
connected directly to a ground
plane on the board. Clamped
input voltage at I/O port is limited
to Vcc + VF at positive transients
and 0V - VF at negative transients
(VF ... diode forward voltage
drop).
ESD0P4RFL
2011-06-27