BTS 3207N Infineon Technologies, BTS 3207N Datasheet

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BTS 3207N

Manufacturer Part Number
BTS 3207N
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 3207N

Packages
PG-SOT223-4
Channels
1.0
Vds (max)
42.0 V
Id(nom)
0.64 A
Rds (on) (max)
500.0 mOhm
Id(lim) (min)
5.0 A
Datasheet
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with auto restart
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Application
· All kinds of resistive, inductive and capacitive loads in switching
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded
protection functions.
or linear applications
Pin 1
In
HITFET
ESD
Gate-Driving
â
Unit
Overload
Protection
Current
Limitation
Over-
temperature
Protection
Overvoltage-
Protection
Short circuit
Protection
1
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
Smart Low Side Power Switch
Source
Drain
Pin 2 and 4 (TAB)
V
Pin 3
bb
V
R
I
E
D(Nom)
DS
DS(on)
AS
HITFET BTS 3207N
4
Rev. 1.2, 2008-04-14
0.64
500
150
1
42
M
2
VPS05163
V
mW
A
mJ
3

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BTS 3207N Summary of contents

Page 1

... Protection Datasheet Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy Current Overvoltage- Limitation Protection Over- Short circuit temperature Protection Protection 1 Smart Low Side Power Switch HITFET BTS 3207N 500 DS(on) I 0.64 D(Nom) E 150 VPS05163 V bb ...

Page 2

... 2) (Human Body Model has to be limited. IN thJA and R ds(on) on has to be limited by Rsc=100mohm/V 2 Smart Low Side Power Switch HITFET BTS 3207N Value bb(SC) 2) -0.2 ... +10 IN self limited | I | £ -40 ...+150 j -55 ... +150 stg 3.8 tot 150 ...

Page 3

... R Datasheet Symbol V I DSS = IN(on °C = 150 °C I D(Nom ° >2.5 V) D(lim) = 200 µs thJA and R ds(on) 3 Smart Low Side Power Switch HITFET BTS 3207N Values min. typ. max DS(AZ IN(th) 1.3 1.7 0 DS(on 1200 - - DS(on ...

Page 4

... off = - IN(Prot Smart Low Side Power Switch HITFET BTS 3207N Values min. typ. max 100 - 60 100 - 0.4 1.5 / 0.6 1.5 /dt DS off 150 175 - 300 150 - - 1 1 ...

Page 5

... HITFET Input circuit (ESD protection) Input Datasheet Inductive and overvoltage output clamp Short circuit behaviour Gate Drive Source/ Ground 5 Smart Low Side Power Switch HITFET BTS 3207N HITFET Rev. 1.2, 2008-04-14 ...

Page 6

... ON 1000 mW 100 ° 150 Typ. input threshold voltage =5V V IN(th) max. 100 125 °C 75 175 Smart Low Side Power Switch HITFET BTS 3207N = f =1.4A; V =10V 800 700 600 500 400 300 200 100 0 -50 - 100 125 °C ) ...

Page 7

... I D(lim) Parameter Off-state drain current I = f(T DSS 11 µ Smart Low Side Power Switch HITFET BTS 3207N = f =12V 100 125 °C -50 - ...

Page 8

... Datasheet 10 Typ. transient thermal impedance Z =f(t thJA Parameter: D -40°C 25°C 85°C 150°C 0 Smart Low Side Power Switch HITFET BTS 3207N cooling area D=0.5 0.2 1 0.1 0.05 0.02 0 0.01 Single pulse - ...

Page 9

... Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet 4 3 2.3 9 Smart Low Side Power Switch HITFET BTS 3207N Package Outlines 1.6 ±0.1 0.1 MAX ...

Page 10

... Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.0 2004-11-19 released production version Datasheet Smart Low Side Power Switch 10 HITFET BTS 3207N Revision History Rev. 1.2, 2008-04-14 ...

Page 11

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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