BTS 3110N Infineon Technologies, BTS 3110N Datasheet - Page 2

• Manufacturer Part Number: BTS 3110N
• Manufacturer: Infineon Technologies

Specifications of BTS 3110N

• Packages: PG-SOT223-4
• Channels: 1.0
• Vds (max): 42.0 V
• Id(nom): 1.4 A
• Rds (on) (max): 220.0 mOhm
• Id(lim) (min): 5.0 A

Datasheet
1 Not tested, specified by design.
2 V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
Thermal resistance
junction - ambient:
@ min. footprint
@ 6 cm
junction-soldering point:
Maximum Ratings at T
Parameter
Drain source voltage
Drain source voltage for short circuit protection
T
Continuous input current
-0.2V
V
Operating temperature
Storage temperature
Power dissipation
T
Unclamped single pulse inductive energy
Load dump protection V
V
R
Electrostatic discharge voltage
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
j
IN
C
IN
L
= -40...150°C
= 9
= 85 °C
< -0.2V or V
= 0 and 10 V, t


2
V
, V
cooling area
IN
A
= 13.5 V
10V
IN
> 10V
d
= 400 ms, R
3)
j
LoadDump
= 25°C, unless otherwise specified
(Human Body Model)
I
2)
= 2
= V


A
,
+ V
1)
S
2
R
R
Symbol
V
V
I
T
T
P
E
V
V
IN
j
stg
thJA
thJS
DS
DS(SC)
tot
AS
LD
ESD
Smart Low Side Power Switch
-55 ... +150
-40 ...+150
| I
no limit
Value
IN
125
150
3.8
72
17
HITFET BTS 3110N
42
18
50
2
|
Rev. 1.3, 2008-04-14
2
K/W
K/W
Unit
V
mA
°C
W
mJ
V
kV