BTS 3104SDR Infineon Technologies, BTS 3104SDR Datasheet - Page 3

• Manufacturer Part Number: BTS 3104SDR
• Manufacturer: Infineon Technologies

Specifications of BTS 3104SDR

• Packages: PG-TO252-3
• Channels: 1.0
• Vds (max): 60.0 V
• Id(nom): 2.0 A
• Rds (on) (max): 104.0 mOhm
• Id(lim) (min): 6.0 A

HITFET - BTS3104SDR
Smart low side power switch
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Features
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Description
The BTS3104SDR is a single channel low-side MOSFET power switch in PG-TO252-3-11 package providing
embedded protective functions.
The device is monolithically integrated with a N channel vertical power FET and embedded protection functions.
The BTS3104SDR is automotive qualified and can be used in 12V and 24V automotive and industrial applications.
Table 1
1) Active clamped
Type
BTS3104SDR
Datasheet
Drain voltage
Maximum Input Voltage
Maximum On-State resistance at 150°C at 5V input voltage
Typical On-State resistance at 25°C and 10V input voltage
Nominal load current
Minimum current limitation level
Short circuit and over load protection
Thermal shutdown with restart behavior
ESD protection
Over voltage protection
Logic level input suitable for 5V and 3.3V
Analog driving possible
12V and 24V usability
Green Product (RoHS compliant)
AEC Qualified
Overview
Product Summary
1)
Package
PG-TO252-3-11
3
V
V
R
R
I
I
D(nom)
D(lim)
D
IN
DS(ON)
DS(ON)
Marking
PG-TO252-3-11
60 V
10 V
323 mΩ
104 mΩ
2.0 A
6 A
Rev. 1.0, 2009-12-06
BTS3104SDR