BTS 50070-1TMB Infineon Technologies, BTS 50070-1TMB Datasheet - Page 3

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BTS 50070-1TMB

Manufacturer Part Number
BTS 50070-1TMB
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 50070-1TMB

Packages
PG-TO220-7
Channels
1.0
Ron @ Tj = 25°c
7.0 mOhm
Recommended Operating Voltage Min.
5.5 V
Recommended Operating Voltage Max.
30.0 V
Il(sc)
90.0 A
Smart High-Side Power Switch
PROFET™
One Channel
1
Features
Operating voltage
Minimum overvoltage protection
Maximum on-state resistance at 150°C
Nominal load current
Minimum load current limitation peak
Maximum stand-by current for whole device with load at
The BTS50070-1TMB is a one channel high-side power switch in PG-TO220-7-12 package providing embedded
protective functions.
The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on
Smart SIPMOS chip on chip technology.
The BTS50070-1TMB has a current controlled input and offers a diagnostic feedback with load current sense and
a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown.
Type
BTS50070-1TMB
Datasheet
Part of scalable product family
Load current sense
Reversave™
Very low standby current
Current controlled input pin
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behavior at under-voltage
Green Product (RoHS compliant)
AEC qualified
Overview
Package
PG-TO220-7-12
T
3
j
= 25 °C
V
V
R
I
I
I
L(nom)
Lpeak(SC)
bb(OFF)
bb(on)
ON(CL)
DS(ON)
Marking
S50070B
PG-TO220-7-12
5.5 .. 30 V
39 V
14 mΩ
12 A
90 A
6 µA
BTS50070-1TMB
Rev. 1.0, 2008-09-05

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