TLE7182EM Infineon Technologies, TLE7182EM Datasheet
TLE7182EM
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TLE7182EM Summary of contents
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... Passive Gxx Clamping 17 5.2.9 ERR Pin 17 5.2.10 Electrical Characteristics 19 5.3 Shunt Signal Conditioning 21 5.3.1 Electrical Characteristics 21 6 Application Information 23 6.1 Layout Guide Lines 25 6.2 Further Application Information 25 7 Package Outlines 26 8 Revision History 27 Data Sheet H-Bridge and Dual Half Bridge Driver IC 2 TLE7182EM Table of Contents Rev 1.1, 2010-09-30 ...
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... AEC Qualified Description The TLE7182EM is a H-bridge driver IC dedicated to control 4 N-channel MOSFETs typically forming the converter for a high current DC motor drives in the automotive sector. It incorporates several protection features such as over current and short circuit detection as well as under-, over voltage and over temperature diagnosis. ...
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... Reset ENA ___ IH1 IL1 Input control Shoot through ___ protection IH2 dead time IL2 ISO Figure 1 Block diagram TLE7182EM Data Sheet H-Bridge and Dual Half Bridge Driver IC VREG Charge Charge pump pump HS2 HS1 Floating HS driver Short circuit detection L E Floating LS driver ...
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... Input for low side switch 1 (active high) Data Sheet H-Bridge and Dual Half Bridge Driver TLE7182EM Pin Configuration BH1 GH1 SH1 GL1 SL GND SCDL ___ ERR IL1 ___ IH1 IL2 ___ IH2 Rev 1.1, 2010-09-30 ...
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... Pin for source connection of high side MOSFET 1 23 GH1 Output pin for gate of high side MOSFET 1 24 BH1 Pin for + terminal of the bootstrap capacitor of phase 1 Tab Tab should be connected to GND Data Sheet H-Bridge and Dual Half Bridge Driver IC 6 TLE7182EM Pin Configuration Rev 1.1, 2010-09-30 ...
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... -40 150 -55 150 stg – 260 T sol 2) T – 260 ref P – 2 tot V – 2 ESD 7 TLE7182EM General Product Characteristics Unit Conditions V – ≥10Ω – V – mA – V – V – V – V – V – V – V – V – ...
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... QVDH1 I – QVDH2 I – Vs(1) I – Vs(2) – external gate charge of the MOSFETs is reduced PWM 8 TLE7182EM General Product Characteristics Limit Values Unit Conditions Max Unit Conditions Max – <7V reduced V VS functionality 8 µ VDH ENA=Low ...
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... Jedec JESD51-2,-5,-7 at natural thJA State Remark High High side MOSFETs off Low Low side MOSFETs off Low Output stages disabled device in sleep mode OPEN Short circuit detection deactivation & warning 9 TLE7182EM General Product Characteristics Unit Conditions K/W – 2) K/W Rev 1.1, 2010-09-30 ...
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... TLE7182EM. Minimum dead time is only generated, if the short circuit detection is activated. If the TLE7182EM drives a load in between the high side MOSFET and the low side MOSFET or the driver is used to drive 4 low side MOSFETs, the short circuit detection and the minimum dead time has to be deactivated by pulling the SCDL pin to 5V ...
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... The outputs will stay in the situation like before the conflicting input. The Shoot through protection and the dead time of the TLE7182EM will be deactivated voltage applied at pin SCDL. The deactivation of the shoot through protection is necessary to drive valves or solenoids which are designed in between the Lowside and Highside MOSFET of one half bridge or 4 separate low side MOSFETs ...
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... This mode is designed for lowest current consumption from the power net of the car. The passive clamping is active. For details see the description of passive clamping, see The TLE7182EM will wake up, if ENA is set to high.The ENA pin is 45V compatible, so ENA can be directly be connected to the ignition key signal KL15. ...
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... Gxx2 V – GHx3 V – GLx3 V 5.0 GHx4 V + diode V 5.0 GHx5 V 6.0 GLx5 V 10 GHx5 V 6.5 GLx5 t – rise t – fall 13 TLE7182EM Description and Electrical Characteristics Unit Conditions Typ. Max. Ω I – 13.5 =-20mA Load Ω I – 9.0 =20mA Load 13.5V I =0mA Load 11 13.5 V 13.5V C =20nF; Load D.C.=50%; ...
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... P(ILN P(ILF P(IHN P(IHF) t – P(diff VREG I 100 VREGOCL V – VsVREG 14 TLE7182EM Description and Electrical Characteristics Unit Conditions Typ. Max. – 1.2 V Sleep mode or VS_UVLO – 85 kΩ Sleep mode or VS_UVLO – 30 kΩ Sleep mode or VS_UVLO V – ...
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... RPP2 I – RPP1 t – RPPrise t – RPPrise t – PENA_H-L – t RST0 t 4 RST1 t 310 sleep t – wake 15 TLE7182EM Description and Electrical Characteristics Unit Conditions Typ. Max. 21 – MHz – =0µA Load ≥-30µ 12.5 V Load V ≥10V; -110 -150 µA ...
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... Vs and VDH Over Voltage Warning The TLE7182EM has an integrated over voltage warning to minimize risk of destruction of the IC at high supply voltages caused by violation of the maximum ratings. For the over voltage warning the voltage is observed at the pin VS and VDH. If the voltage level has reached, the fixed over voltage threshold warning at ERR pin is set and TLE7182EM will go in normal operation with warning ...
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... Reset of error registers and Disable The TLE7182EM can be reset by the enable pin ENA. If the ENA pin is pulled to low for a specified minimum time, the error registers are cleared. ERR output is still set to low. After the next rising edge at ENA pin ERR pin will be set to high and no error condition is applied ...
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... MOSFET, charge pump, Vreg switched off All MOSFETs actively switched off All MOSFETs actively switched off All MOSFETs actively switched off start up 18 TLE7182EM internal Error Logic Restart – Self clearing Self clearing Self clearing Self clearing Self clearing ...
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... OVW V 2.1 3.1 4.1 OVWhys 4.5 5.0 5.5 UVVR t – 20 – UVLO V 5.5 6.0 6.5 UVVR t 10 – 30 UVVR V – 0.5 – UWRhys 19 TLE7182EM Unit Conditions V programmed by SCDL pin ≤ V ≤ % 0.2V 0.3V SCDL ≤ V ≤ % 0.3V 1.2V SCDL ≤ V ≤ % 1.2V 2.0V SCDL µs – µs – kΩ – V – µs – V – V – ...
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... OCTH t 2.3 – 4 4.6 – – ERR t – – 3 f(ERR 100 170 f(ERR ... 7V, but characteristics might be out of specified range VS 20 TLE7182EM Unit Conditions °C – °C – V – µs – =7V µs =1nF; LOAD kΩ – Rev 1.1, 2010-09-30 ...
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... Shunt Signal Conditioning The TLE7182EM incorporates a fast and precise operational amplifier for conditioning and amplification of the current sense shunt signal. The gain of the OpAmp is adjustable by external resistors within a range higher than 5. The usage of higher gains in the application might be limited by required settling time and band width. ...
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... V/ 100 – – 0.7 1 – 1 set1 1) t – 4.6 set2 22 TLE7182EM Unit Conditions Max. I 5.2 V =-3mA OH – mA – – kΩ – 10kHz – dB – V – dB =360mV* IN sin(2*π*freq*t); R =500Ω =7500Ω fb – ...
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... VS1 2,2µF PGND µC e.g.: XC2xxx SC1 R SC2 GND R C ISO ISO 100pF GND Figure 6 Application Diagram 1: DC-Brush motor controlled by TLE7182EM Data Sheet H-Bridge and Dual Half Bridge Driver GND C REG1 C VS2 2,2µF R 10nF C RPS REG2 4.7kΩ 10nF PGND ...
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... SC2 GND R ISO C ISO 100pF GND Figure 7 Application Diagram 2: 2 inductive loads driven by TLE7182EM Note: This are very simplified examples of an application circuit. The function must be verified in the real application. Data Sheet H-Bridge and Dual Half Bridge Driver GND ...
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... B should be used - one per half bridge C and each of the two ceramic capacitors C B and ceramic capacitor C (C and http://www.infineon.com/ 25 TLE7182EM Application Information should be assigned to one of C are in parallel) and the shunt resistor form C Rev 1.1, 2010-09-30 ...
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... Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet H-Bridge and Dual Half Bridge Driver IC 2x 0.1 C 0.08 C Seating Plane C A-B D 24x M 0 TLE7182EM Package Outlines 0.35 x 45˚ 1) 3.9 ±0 ±0.2 0 Bottom View 6.4 ± ...
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... Over voltage warning filter time for Vs and/or VDH centered ERR output voltage added OpAmp bandwidth adjusted 0.8 2010-08-31 Preliminary Datasheet 0.7 2009-11-19 Target data sheet 0.6 2008-30-10 Target data sheet Data Sheet H-Bridge and Dual Half Bridge Driver IC 27 TLE7182EM Revision History Rev 1.1, 2010-09-30 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...