BTS 7970B Infineon Technologies, BTS 7970B Datasheet - Page 4

• Manufacturer Part Number: BTS 7970B
• Manufacturer: Infineon Technologies

Specifications of BTS 7970B

• Packages: P-TO263-7
• Operating Range: 5.5 - 28.0 V
• Rds (on) (typ): 16.0 mOhm
• Id(lim): 68.0 A
• Iq (typ): 7.0 µA
• Diagnosis: OV, OT, OC-failure flag, current sense

1
The BTS 7970B is part of the NovalithIC family containing three separate chips in one
package: One p-channel highside MOSFET and one n-channel lowside MOSFET
together with a driver IC, forming a fully integrated high current half-bridge. All three
chips are mounted on one common leadframe, using the chip on chip and chip by chip
technology. The power switches utilize vertical MOS technologies to ensure optimum on
state resistance. Due to the p-channel highside switch the need for a charge pump is
eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the
integrated driver IC which features logic level inputs, diagnosis with current sense, slew
rate adjustment, dead time generation and protection against overtemperature,
overvoltage, undervoltage, overcurrent and short circuit. The BTS 7970B can be
combined with other BTS 7970B to form H-bridge and 3-phase drive configurations.
1.1
Figure 1
Data Sheet
INH
SR
IN
IS
Overview
Block Diagram
Block Diagram
BTS 7970B
Top-chip
Gate Driver
Dead Time Gen.
Slew Rate Adj.
UV Shut Down
OV Lock Out
OT Shut Down
Current Lim.
Diagnosis
Current Sense
3
High Current PN Half Bridge
HS base-chip
LS base-chip
Rev. 2.0, 2006-05-09
VS
OUT
GND
BTS 7970B
Overview