KSP10 Fairchild Semiconductor, KSP10 Datasheet

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KSP10

Manufacturer Part Number
KSP10
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2002 Fairchild Semiconductor Corporation
VHF/UHF transistor
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
V
V
V
P
P
T
T
Rth(j-c)
Rth(j-a)
BV
BV
BV
I
I
h
V
V
f
C
C
C
CBO
EBO
T
Symbol
FE
J
STG
CBO
CEO
EBO
C
C
CE
BE
ob
rb
c·rbb´
CBO
CEO
EBO
Symbol
(on)
(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector Base Feedback Capacitance
Collector Base Time Constant
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation (T
Derate above 25 C
Collector Power Dissipation (T
Derate above 25 C
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
a
C
=25 C)
=25 C)
KSP10
I
I
I
V
V
V
I
V
V
V
V
V
f=31.8MHz
C
C
E
C
CB
EB
CE
CE
CE
CB
CB
CB
=10 A, I
=100 A, I
=1mA, I
=4mA, I
=2V, I
=25V, I
=10V, I
=10V, I
=10V, I
=10V, I
=10V, I
=10V, I
Test Condition
B
C
B
C
=0
E
=0
C
=0.4mA
C
C
E
E
C
E
=0
=0
=0, f=1MHz
=0, f=1MHz
=4mA
=4mA
=4mA, f=100MHz
=4mA,
=0
1. Base 2. Emitter 3. Collector
1
-55~150
Value
350
150
125
357
3.0
2.8
1.0
8.0
30
25
Min.
0.35
650
3.0
30
25
60
TO-92
Max.
0.95
0.65
100
100
0.5
0.7
9.0
Rev. A2, September 2002
mW/ C
Units
W/ C
mW
C/W
C/W
W
V
V
V
C
C
Units
MHz
nA
nA
pF
pF
ps
V
V
V
V
V

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KSP10 Summary of contents

Page 1

... Current Gain Bandwidth Product T C Output Capacitance ob C Collector Base Feedback Capacitance rb C Collector Base Time Constant c·rbb´ * Pulse Test: PW 300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation KSP10 T =25 C unless otherwise noted a Parameter = = =25 C unless otherwise noted a Test Condition ...

Page 2

... C Figure 3. Current Gain Bandwidth Product 0 -10 -20 1000MHz -30 700 -40 400 -50 - Figure 5. Polar Form ©2002 Fairchild Semiconductor Corporation 10000 V = 10V CE 1000 100 10 100 1000 0.1 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 140 V = 10V CE f=100MHz 120 100 ...

Page 3

... Figure 9. Polar Form 1000MHz 8 700 6 4 400 200 2 100 Figure 11. Polar Form ©2002 Fairchild Semiconductor Corporation (Continued 600 700 3 2 1000MHz -10 -20 -30 0 100 0.4 0.8 1.2 1.6 2.0 100 ...

Page 4

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, September 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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