SGL50N60RUFD Fairchild Semiconductor, SGL50N60RUFD Datasheet

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... 100 C C Parameter IGBT = 100 15V 2 50A CE(sat 50ns (typ SGL50N60RUFD Units 600 150 250 W 100 W -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 0.5 C/W -- 1.0 C C/W SGL50N60RUFD Rev. A1 ...

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... V -- 2 3311 -- pF -- 399 -- pF 139 -- 100 ns -- 118 200 2.71 3 110 ns -- 261 400 4.01 5. 145 210 100 Typ. Max. Units -- 1 100 ns -- 140 -- -- 6 7 200 360 nC -- 580 -- SGL50N60RUFD Rev. A1 ...

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... Fig 6. Saturation Voltage vs 15V = 25℃ ━━ = 125℃ ------ 1 10 Collector - Emitter Voltage 300V CC Load Current : peak of square wave = 100℃ 100 1000 Frequency [KHz] = 125℃ C 100A 50A I = 30A Gate - Emitter Voltage SGL50N60RUFD Rev ...

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... Collector Current = ± 15V GE Ton Tr 10 100 Gate Resistance ± 15V = 300V Eon Eoff Eoff 10 100 Gate Resistance Common Emitter = ± 15V 5 25℃ ━━ 125℃ ------ 100 Collector Current, I [A] C SGL50N60RUFD Rev. A1 ...

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... 100 V 300 V CC 200 120 150 Gate Charge Safe Operating Area V = 20V 100℃ 100 Collector-Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + SGL50N60RUFD Rev. A1 180 1000 ...

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... 100℃ ------ 100 [V] FM Fig 19. Reverse Recovery Current 200 180 160 140 120 100 1000 100 Fig 21. Reverse Recovery Time 1000 di/dt [A/us 200V 30A F = 25℃ ━━ 100℃ ------ C 1000 di/dt [A/us] SGL50N60RUFD Rev. A1 ...

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... Package Dimension 20.00 (8.30) (7.00) 4.90 0.20 (1.50) 2.50 0.20 5.45TYP [5.45 ] 0.30 ©2002 Fairchild Semiconductor Corporation TO-264 0.20 (8.30) (1.00) (0.50) (7.00) (1.50) 3.00 0.20 +0.25 1.00 –0.10 5.45TYP [5.45 ] 0.30 (2.00) (1.50) +0.25 0.60 2.80 0.30 –0.10 Dimensions in Millimeters SGL50N60RUFD Rev. A1 ...

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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ ...