FGD4536 Fairchild Semiconductor, FGD4536 Datasheet - Page 4

• Manufacturer Part Number: FGD4536
• Manufacturer: Fairchild Semiconductor

FGD4536 Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
100
10
20
16
12
15
12
1
8
4
0
9
6
3
0
0
0
0
Gate Resistance
I
C
= 20A
10
4
10
Gate-Emitter Voltage, V
Gate Resistance, R
50A
t
Gate Charge, Q
d(on)
V
30A
CC
t
r
20
20
8
= 100V
Common Emitter
V
I
T
T
C
C
C
CC
= 20A
12
30
= 25
= 125
30
= 200V, V
g
Common Emitter
T
Common Emitter
T
[nC]
G
o
C
C
C
[ Ω ]
o
GE
= 125
= 25
C
GE
[V]
200V
o
16
40
GE
40
C
o
C
= 15V
50
20
50
4
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
Figure 12. Turn-off Characteristics vs.
1000
2400
2000
1600
1200
0.01
100
800
400
500
100
0.1
10
10
0
1
0.1
0.1
0
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
Gate Resistance
10
Gate Resistance, R
1
t
d(off)
t
f
20
1
10
DC
1ms
Common Emitter
V
I
T
T
C
30
CC
C
C
Common Emitter
V
T
C
C
C
= 20A
100
C
GE
= 25
= 125
G
ies
oes
res
= 200V, V
= 25
[ Ω ]
= 0V, f = 1MHz
µ
CE
s
o
10
100
C
o
o
CE
C
C
[V]
µ
s
[V]
40
10
GE
www.fairchildsemi.com
= 15V
1000
30
50