IXER20N120 IXYS, IXER20N120 Datasheet - Page 3

• Manufacturer Part Number: IXER20N120
• Description: 3rd Generation NPT Discrete IGBTs
• Manufacturer: IXYS

Specifications of IXER20N120

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 29
• Ic90, Tc=90°c, Igbt, (a): 19
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.8
• Tfi, Typ, Igbt, (ns): 175
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.5
• Rthjc, Max, Igbt, (°c/w): 0.96
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
80
60
40
20
80
60
40
20
15
12
0
0
9
6
3
0
0
0
0
Fig. 
Fig. 3
Fig. 5
V
CE
T
VJ
= 20 V
= 25°C
1
20
Typ. output characteristics
Typ. transfer characteristics
Typ. turn on gate charge
5
V
I
C
2
CE
T
= 600 V
VJ
= 20 A
40
Q
= 25°C
V
V
GE
CE
G
10
3
[nC]
[V]
[V]
60
4
T
V
15
VJ
GE
= 125°C
80
= 17 V
5
13 V
11 V
15 V
9 V
100
20
6
40
30
20
10
50
40
30
20
10
60
50
40
30
20
10
0
0
0
0
0
0
Fig. 2
Fig. 4
Fig. 6
I
RM
T
VJ
= 125°C
1
200
Typ. output characteristics
Typ. forward characteristics
of free wheeling diode
Typ. turn off characteristics
of free wheeling diode
1
T
VJ
2
= 125°C
400
-di/dt [A/µs]
V
V
CE
F
3
2
T
V
I
F
[V]
VJ
R
[V]
= 15 A
= 600 V
= 125°C
600
IXER 20N120
IXER 20N120D1
V
GE
4
= 17 V
T
3
VJ
800
= 25°C
5
FII30-12E
15 V
13 V
11 V
9 V
1000
t
rr
6
4
200808a
200
150
100
50
0
3 - 4