IXYN100N120C3H1 IXYS, IXYN100N120C3H1 Datasheet

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IXYN100N120C3H1

Manufacturer Part Number
IXYN100N120C3H1
Description
XPT 1200V
Manufacturer
IXYS
Datasheet

Specifications of IXYN100N120C3H1

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
134
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
62
Vce(sat), Typ, Tj = 25°c, Igbt (v)
3.5
Tfi, Typ, Tj = 25°c, Igbt, (ns)
110
Eoff, Typ, Tj = 125°c, Igbt (mj)
3.55
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.18
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
42
Rthjc, Max, Diode (k/w)
0.42
Package Style
SOT-227
1200V XPT
GenX3
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
A
CES
GES
J
JM
stg
CES
CGR
GES
GEM
AS
C
ISOL
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Terminal Connection Torque
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
T
V
T
50/60Hz
I
Mounting Torque
Test Conditions
I
V
V
I
I
ISOL
C
C
C
J
J
C
C
C
C
C
C
C
GE
CE
CE
w/ Diode
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 25°C
= 15V, T
≤ 1mA
= 250μA, V
= V
= 0V, V
= 100A, V
= 250μA, V
TM
CES
, V
IGBT
GE
VJ
GE
= ±20V
GE
= 125°C, R
= 0V
CE
GE
= 15V, Note 1
= V
= 0V
t = 1min
t = 1s
GE
GE
= 1MΩ
G
= 1Ω
Advance Technical Information
T
T
J
J
= 125°C
= 125°C
IXYN100N120C3H1
1200
Min.
Characteristic Values
3.0
@V
-55 ... +150
-55 ... +150
Maximum Ratings
I
CE
CM
1.3/11.5
1.5/13
Typ.
3.9
= 200
2.9
2500
3000
1200
1200
134
±20
±30
440
V
690
150
1.2
62
42
50
30
CES
E
±100
Nm/lb.in.
Max.
Nm/lb.in.
3.5
5.0
50
3 mA
V~
V~
μA
nA
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
A
V
V
V
g
J
V
I
V
t
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Isolation Voltage
Anti-Parallel Ultra Fast Diode
Positive Thermal Coefficient of
Avalanche Rated
High Current Handling Capability
International Standard Package
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
Main or Kelvin Emitter
either emitter terminal can be used as
E153432
= 1200V
= 62A
= 110ns
≤ ≤ ≤ ≤ ≤ 3.5V
G
2500V~
E
C
DS100407(10/11)
E

Related parts for IXYN100N120C3H1

IXYN100N120C3H1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 100A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXYN100N120C3H1 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 134 62 42 440 50 1.2 = 1Ω 200 G CM ≤ ...

Page 2

... Characteristic Values Min. Typ 125°C 1 125°C J 420 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYN100N120C3H1 SOT-227B miniBLOC (IXYN) Max 5. 0.18 °C/W °C/W Max. ...

Page 3

... T = 25ºC 180 J 160 140 120 = 200A C 100 100A 50A IXYN100N120C3H1 Fig. 2. Extended Output Characteristics @ T 11V V = 15V GE 13V 12V 10V Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 2 200A C 1.8 1.6 1 ...

Page 4

... C oes res 200 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXYN100N120C3H1 Fig. 8. Gate Charge V = 600V 100A 10mA 120 160 200 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º ...

Page 5

... 100 125 170 220 150 200 130 180 110 160 90 140 120 70 100 100 IXYN100N120C3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V 125º 25º ...

Page 6

... 100 125 IXYN100N120C3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 125º 600V Amperes C 33 ...

Page 7

... Fig. 21. Fig. 23. Fig. 25. © 2011 IXYS CORPORATION, All Rights Reserved IXYN100N120C3H1 Fig. 22. Fig. 24 thJC 0 0.01 0.0001 0.001 0.01 0.1 t [s] p Fig. 26. Fig. 26. Transient thermal impedance 1 10 ...

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