IXTR140P10T IXYS, IXTR140P10T Datasheet

no-image

IXTR140P10T

Manufacturer Part Number
IXTR140P10T
Description
TrenchP Channel Power MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTR140P10T

Vdss, Max, (v)
-100
Id(cont), Tc=25°c, (a)
-90
Rds(on), Max, Tj=25°c, (?)
0.013
Ciss, Typ, (pf)
31400
Qg, Typ, (nc)
400
Trr, Typ, (ns)
130
Trr, Max, (ns)
-
Pd, (w)
270
Rthjc, Max, (k/w)
0.46
Package Style
ISOPLUS247
TrenchP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±15V, V
= V
= -10V, I
DM
GS
DSS
, V
, I
, V
DD
D
D
= - 250μA
D
≤ V
= - 250μA
GS
DS
= - 70A, Note 1
= 0V
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTR140P10T
20..120/4.5..27
-100
- 2.0
Min.
Characteristic Values
- 55 ... +150
- 55 ... +150
Maximum Ratings
- 400
2500
-100
-100
-140
- 90
Typ.
±15
±25
270
150
300
260
10
5
2
Max.
±100 nA
- 4.0
-150 μA
- 10 μA
13 mΩ
N/lb.
V/ns
V~
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
V
g
J
V
I
R
Features
Advantages
Applications
ISOPLUS247
G = Gate
S = Source
D25
Avalanche Rated
Low R
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Extended FBSOA
Fast Intrinsic Diode
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS(on)
DSS
G
E153432
DS(ON)
D
≤ ≤ ≤ ≤ ≤
=
=
S
and Q
D
- 90A
-100V
G
= Drain
Isolated Tab
13mΩ Ω Ω Ω Ω
DS100376A(11/11)

Related parts for IXTR140P10T

IXTR140P10T Summary of contents

Page 1

... GSS DSS DS DSS -10V 70A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTR140P10T Maximum Ratings -100 = 1MΩ -100 GS ±15 ± 400 JM -140 2 ≤ 150° 270 - 55 ... +150 150 - 55 ... +150 300 260 2500 20 ...

Page 2

... DSS D 100 0.15 Characteristic Values Min. Typ. JM 130 650 -10 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTR140P10T ISOPLUS247 (IXFR) Outline Max 0.46 °C/W °C/W Max. -140 A - 560 A -1 6,404,065 B1 ...

Page 3

... J = -10V -2.4 -2.8 -3 70A vs. D -100 T = 125º 25ºC J -200 -250 -300 -350 IXTR140P10T Fig. 2. Extended Output Characteristics @ -10V - - Volts DS Fig Normalized to I DS(on) Junction Temperature 2 -10V 2 1.6 1.4 1.2 1 ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 25ºC J -1.0 -1.1 -1.2 -1.3 -1.4 -1.5 - 1,000 C iss - 100 C oss - C rss -25 -30 -35 -40 - Volts IXTR140P10T Fig. 8. Transconductance 200 40ºC J 180 160 140 120 100 -20 -40 -60 -80 -100 -120 I - Amperes D Fig. 10. Gate Charge ...

Page 5

... T = 125º 25º -110 -120 -130 -140 IXTR140P10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω -10V -100V DS -50 -60 -70 -80 -90 -100 I - Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTR140P10T 0.1 1 IXYS REF: T_140P10T(A8)8-24-11 10 ...

Related keywords