IXTP32P20T IXYS, IXTP32P20T Datasheet - Page 5

• Manufacturer Part Number: IXTP32P20T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTP32P20T

• Vdss, Max, (v): -200
• Id(cont), Tc=25°c, (a): -32
• Rds(on), Max, Tj=25°c, (?): 0.13
• Ciss, Typ, (pf): 14500
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): 190
• Trr, Max, (ns): -
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-220

© 2010 IXYS CORPORATION, All Rights Reserved
100,000
10,000
1,000
-100
100
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-90
-80
-70
-60
-50
-40
-30
-20
-10
10
-5
0
0
-3.0
-0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-0.4
-5
-3.5
-0.5
-10
-4.0
Fig. 7. Input Admittance
Fig. 11. Capacitance
-0.6
-15
T
V
-4.5
J
DS
V
V
= 125ºC
GS
SD
- Volts
T
-0.7
- Volts
-20
- Volts
J
= 125ºC
C oss
C rss
-5.0
C iss
-0.8
-25
25ºC
-5.5
-0.9
-30
T
J
= 25ºC
-6.0
- 40ºC
-1.0
-35
-6.5
-1.1
-40
-
1000
-
-
100
-10
-
0.1
60
50
40
30
20
10
10
-
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
1
-
0
0
1
T
T
Single Pulse
V
I
I
J
C
-5
D
G
DS
= 150ºC
= 25ºC
20
= -16A
= -1mA
= -100V
Fig. 12. Forward-Bias Safe Operating Area
R
-10
DS(on)
40
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Limit
-15
Fig. 8. Transconductance
60
-
10
Fig. 10. Gate Charge
-20
Q
I
D
G
V
80
- Amperes
DS
- NanoCoulombs
-25
- Volts
100
-30
120
-35
-
100
125ºC
-40
140
DC
T
25ºC
J
25µs
100µs
1ms
10ms
100ms
= - 40ºC
-45
160
-50
180
-
1000
-55