IXTV86N25T IXYS, IXTV86N25T Datasheet - Page 2

• Manufacturer Part Number: IXTV86N25T
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTV86N25T

• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 86
• Rds(on), Max, Tj=25°c, (?): 0.037
• Ciss, Typ, (pf): 5330
• Qg, Typ, (nc): 105
• Trr, Typ, (ns): 156
• Trr, Max, (ns): -
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: PLUS220

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
I
Q
Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
PLUS220 (IXTV) Outline
fs
J
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
2. On through-hole packages, R
5mm or less from the package body.
Pulse test, t ≤ 300ms; duty cycle, d ≤ 2%.
Resistive Switching Times
V
R
I
V
V
V
V
V
Repetitive, pulse width limited by T
I
Test Conditions
Test Conditions
F
F
GS
R
G
DS
GS
GS
GS
= 43A, -di/dt = 250A/μs
= I
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 3.3Ω (External)
= 10V, V
= 10V, V
= 10V, I
= 0V, V
= 0V
S
, V
GS
= 0V, Note 1
DS
D
DS
DS
GS
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
D25
DSS
, Note 1
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 25A
= 0.5 • I
Kelvin test contact location must be
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
45
6,162,665
6,259,123 B1
6,306,728 B1
5330
Typ.
Typ.
0.25
156
515
105
21
1.7
76
92
22
28
55
25
32
28
0.23 °C/W
Max.
172
Max.
1.5
6,404,065 B1
6,534,343
6,583,505
86
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
A
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTH86N25T IXTQ86N25T
TO-247AD Outline
TO-3P (IXTQ) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
ÆP
Q
R
S
Pins: 1 - Gate
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
3 - Source 4, TAB - Drain
Millimeter
3 - Source
.4
1
7,005,734 B2
7,063,975 B2
21.46
16.26
20.32
2
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
IXTV86N25T
5.3
2.6
1.4
3
.8
2 - Drain
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216