IXTC96N25T IXYS, IXTC96N25T Datasheet - Page 2

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IXTC96N25T

Manufacturer Part Number
IXTC96N25T
Description
Trench MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTC96N25T

Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
40
Rds(on), Max, Tj=25°c, (?)
0.031
Ciss, Typ, (pf)
6100
Qg, Typ, (nc)
114
Trr, Typ, (ns)
158
Trr, Max, (ns)
-
Pd, (w)
147
Rthjc, Max, (k/w)
0.85
Package Style
ISOPLUSS220
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
I
Q
Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
(T
(T
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
Pulse test: t ≤ 300μs; duty cycle, d ≤ 2%.
Resistive Switching Times
V
R
I
V
Test Conditions
V
V
V
Test Conditions
V
Repetitive, pulse width limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 48A, -di/dt = 250A/μs
= I
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 10V, I
= 10V, V
= 15V, V
= 2.5Ω (External)
= 0V, V
= 0V
S
, V
GS
= 0V, Note 1
D
DS
DS
DS
= 48A, Note 1
GS
= 25V, f = 1MHz
= 0.5 V
= 0.5 • V
= 0V
4,835,592
4,881,106
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 48A
= 48A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
50
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
6100
Typ.
0.21
Typ.
158
625
114
1.8
82
75
20
22
59
28
33
34
23
0.85 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
300
1.5
96
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS220 (IXTC) Outline
Note: Bottom heatsink (Pin 4) is
electrically isolated from Pins 1, 2 and 3.
6,727,585
6,771,478 B2 7,071,537
1.Gate
3.Sourc
7,005,734 B2
7,063,975 B2
IXTC96N25T
e
2. Drain
7,157,338B2

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