IXTQ60N20T IXYS, IXTQ60N20T Datasheet - Page 4

• Manufacturer Part Number: IXTQ60N20T
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTQ60N20T

• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.04
• Ciss, Typ, (pf): 4530
• Qg, Typ, (nc): 73
• Trr, Typ, (ns): 118
• Trr, Max, (ns): -
• Pd, (w): 500
• Rthjc, Max, (k/w): 0.3
• Package Style: TO-3P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
180
160
140
120
100
100
120
100
80
60
40
20
10
80
60
40
20
0
0
0.2
3.0
0
f
= 1 MHz
0.3
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
0.4
4.0
10
0.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.5
15
0.6
V
V
DS
SD
T
V
J
GS
- Volts
= 150ºC
- Volts
5.0
0.7
20
- Volts
T
J
= 150ºC
0.8
- 40ºC
5.5
25
25ºC
0.9
T
J
6.0
30
= 25ºC
C oss
C rss
C iss
1.0
6.5
35
1.1
7.0
1.2
40
1.00
0.10
0.01
120
100
80
60
40
20
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
= 30A
= 10mA
= 100V
10
20
0.0001
IXTA60N20T IXTP60N20T
20
40
Fig. 8. Transconductance
Fig. 10. Gate Charge
Pulse Width - Second
Q
0.001
G
30
- NanoCoulombs
60
I
D
- Amperes
40
80
0.01
50
IXTQ60N20T
100
T
J
150ºC
= - 40ºC
25ºC
IXYS REF: T_60N20T(5G)02-10-10
0.1
60
120
70
140
1