IXTM20N60 IXYS, IXTM20N60 Datasheet - Page 4

• Manufacturer Part Number: IXTM20N60
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTM20N60

• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 20
• Rds(on), Max, Tj=25°c, (?): 0.35
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): 600
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-204

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0.001
4500
4000
3500
3000
2500
2000
1500
1000
0.01
500
0.1
10
0.00001
9
8
7
6
5
4
3
2
1
0
0
1
0
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
D=0.05
D=0.02
D=0.01
D=0.2
D=0.5
D=0.1
Single Pulse
V
I
I
D
G
DS
= 20A
= 10mA
20
= 300V
5
Gate Charge - nCoulombs
40
0.0001
10
V
60
f = 1 MHz
V
CE
DS
- Volts
= 25V
C
C
C
iss
oss
rss
80
15
100
20
0.001
120
140
25
Pulse Width - Seconds
0.01
100
0.1
10
80
70
60
50
40
30
20
10
1
0
0.00
Fig.8 Forward Bias Safe Operating Area
Fig.10 Source Current vs. Source
1
Limited by R
0.25
0.1
to Drain Voltage
DS(on)
T
0.50
J
= 125°C
10
V
V
SD
DS
0.75
- Volts
- Volts
1
IXTH 20N60
IXTM 20N60
T
1.00
J
100
= 25°C
1.25
600
1.50
10
10µs
100µs
1ms
10ms
100ms
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