SKM150GB123D SEMIKRON, SKM150GB123D Datasheet - Page 5

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SKM150GB123D

Manufacturer Part Number
SKM150GB123D
Description
Manufacturer
SEMIKRON
Datasheet

Specifications of SKM150GB123D

Family/system
SEMITRANS
Voltage (v)
1200
Current (a)
100
Chip-type
NPT IGBT (Standard)
Case
SEMITRANS 3

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SKM 150GB123D
5
Fig. 7 Typ. switching times vs. I
Fig. 9 Transient thermal impedance of IGBT
Z
Fig. 11 CAL diode forward characteristic
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
C
11-09-2006 RAA
Fig. 8 Typ. switching times vs. gate resistor R
Fig. 10 Transient thermal impedance of FWD
Z
Fig. 12 Typ. CAL diode peak reverse recovery current
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
G
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