AP4523GM Advanced Power Electronics Corp., AP4523GM Datasheet
AP4523GM
Specifications of AP4523GM
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AP4523GM Summary of contents
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... Data and specifications subject to change without notice Pb Free Plating Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-channel ± Parameter 3 Max. AP4523GM 40V DSS R 30mΩ DS(ON) I 6.8A D -40V DSS R 52mΩ DS(ON) I -5. Rating Units ...
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... AP4523GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... D V =-30V DS V =-4. =-20V =3.3Ω,V =-10V =20Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.5A =-5A dI/dt=-100A/µs AP4523GM Min. Typ. Max. Units -40 - =-1mA - - ±100 - 820 ...
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... AP4523GM N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...
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... DC 0.01 10 100 0.001 Fig 10. Effective Transient Thermal Impedance =150 Fig 12. Gate Charge Waveform AP4523GM f=1.0MHz oss C rss Drain-to-Source Voltage (V) DS Duty factor=0 Duty factor = t/T Peak ...
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... AP4523GM P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 120 100 ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...
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... Single Pulse DC 0.01 100 0.001 0.01 Fig 10. Effective Transient Thermal Impedance =150 C j -4. Fig 12. Gate Charge Waveform AP4523GM f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T Peak ...