AP2530GY-HF Advanced Power Electronics Corp., AP2530GY-HF Datasheet - Page 2

• Manufacturer Part Number: AP2530GY-HF
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2530GY-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 72
• Rds(on) / Max(m?) Vgs@4.5v: 125
• Qg (nc): 3
• Qgs (nc): 1
• Qgd (nc): 2
• Id(a): 3.3
• Pd(w): 1.14
• Configuration: Complementary N-P
• Package: SOT-26

ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
N-CH Electrical Characteristics@T
Source-Drain Diode
AP2530GY-HF
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
DSS
Symbol
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
=70
o
j
2
C)
=25
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=3A
=1A
=0.9A, V
=3A, V
o
=3.3Ω,V
=15Ω
C(unless otherwise specified)
=V
=5V, I
=30V, V
=24V, V
=25V
=15V
=25V
=0V, I
=10V, I
=4.5V, I
=+20V, V
=4.5V
=0V
GS
Test Conditions
Test Conditions
GS
, I
D
D
GS
D
=250uA
=3A
=0V
D
D
=250uA
GS
GS
GS
=3A
=0V
=2A
DS
=10V
=0V
=0V
=0V
D
=1mA
Min.
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.02
Typ.
170
0.5
11
50
35
14
4
3
1
2
6
8
2
7
-
-
-
-
-
-
-
-
+100
Max. Units
Max. Units
125
270
0.8
1.3
72
25
3
1
5
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
nC
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
V
2