STM8L101G3 STMicroelectronics, STM8L101G3 Datasheet - Page 63

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STM8L101G3

Manufacturer Part Number
STM8L101G3
Description
Ultra Low Power MCUs, STM8L
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8L101G3

Low Power Consumption (halt
0.3 μA, Active-halt
Temp. Range
-40 to 85 °C and 125 °C
Three Low Power Modes
Wait, Active-halt, Halt

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STM8L101xx
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Table 35.
1. Not tested in production.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin).
This test conforms to the JESD22-A114A/A115A standard.
Table 36.
1. Data based on characterization results, not tested in production.
V
V
Symbol
Symbol
ESD(HBM)
ESD(CDM)
S
EMI
Peak level
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
EMI data
ESD absolute maximum ratings
Parameter
(1)
Ratings
V
T
LQFP32
conforming to
IEC61967-2
A
DD
Doc ID 15275 Rev 11
Conditions
+25 °C,
3.6 V,
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
SAE EMI Level
frequency band
Monitored
Conditions
T
A
+25 °C
Electrical parameters
Max vs.
16 MHz
Maximum
value
-3
-6
-5
1
2000
500
(1)
dB V
Unit
Unit
63/81
-
V

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