STTH1602C STMicroelectronics, STTH1602C Datasheet - Page 3

• Manufacturer Part Number: STTH1602C
• Description: High Efficiency Ultrafast Diode
• Manufacturer: STMicroelectronics

Specifications of STTH1602C

• Insulated Package: TO-220FPAB

Fig. 1: Peak current versus duty cycle (per diode).
80
70
60
50
40
30
20
10
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
100
Fig. 3-2: Relative variation of thermal impedance
junction
(TO-220FPAB).
1.0
0.1
0.0
0
90
80
70
60
50
40
30
20
10
1.E-03
0
0.0
I (A)
0.0
M
Z
I
FM
th(j-c)
Single pulse
(A)
0.2
0.1
P = 3W
/R
th(j-c)
0.4
0.2
to
P = 8W
1.E-02
0.6
0.3
case
0.8
P = 15W
0.4
1.0
T =150°C
versus
t (s)
1.E-01
j
p
0.5
1.2
δ
V
FM
1.4
0.6
(V)
1.6
pulse
0.7
1.E+00
T =25°C
j
1.8
I
δ
M
0.8
=tp/T
2.0
duration
T
0.9
2.2
tp
1.E+01
1.0
2.4
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
100
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
D
1.0
0.1
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
100
90
80
70
60
50
40
30
20
10
10
1.E-03
0
2
0.0
PAK, I
Z
0
I
C(pF)
FM
th(j-c)
Single pulse
(A)
0.2
/R
2
th(j-c)
0.4
PAK).
0.6
50
1.E-02
0.8
1.0
T =150°C
j
V
t (s)
p
V (V)
FM
100
1.2
R
(V)
1.4
1.E-01
1.6
T =25°C
j
STTH1602C
150
1.8
V
OSC
2.0
F=1MHz
T =25°C
=30mV
j
2.2
RMS
1.E+00
3/7
200
2.4