STTH6112TV STMicroelectronics, STTH6112TV Datasheet - Page 4

• Manufacturer Part Number: STTH6112TV
• Description: Ultrafast recovery - 1200 V diode
• Manufacturer: STMicroelectronics

Characteristics
4/8
Figure 3.
Figure 5.
Figure 7.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
800
700
600
500
400
300
200
3.0
2.5
2.0
1.5
1.0
0.5
1.E-03
Z
0
0
th(j-c)
S factor
t (ns)
rr
Single pulse
50
I
50
F
/R
=0.5 x I
th(j-c)
I
F
= 2 x I
100
100
Relative variation of thermal
impedance junction to case
versus pulse duration
Reverse recovery time versus
dI
Softness factor versus dI
(typical values)
F(AV)
1.E-02
F
F(AV)
/dt (typical values)
dI /dt(A/µs)
150
150
F
I
I
F
F
= I
= I
F(AV
F(AV
dI /dt(A/µs)
200
200
)
)
F
1.E-01
t (s)
250
p
250
300
300
350
350
1.E+00
400
400
I
F
F
V
T
V
T
= 2 x I
j
R
j
=125°C
R
/dt
=125°C
=600V
=600V
450
450
F(AV)
1.E+01
500
500
Figure 4.
Figure 6.
Figure 8.
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
8
7
6
5
4
3
2
1
0
60
55
50
45
40
35
30
25
20
15
10
5
0
0
I
Q (µC)
0
RM
25
rr
V
T
(A)
j
R
=125°C
50
V
T
=600V
50
j
R
=125°C
=600V
Peak reverse recovery current
versus dI
100
100
Reverse recovery charges versus
dI
Relative variations of dynamic
parameters versus junction
temperature
F
I
I
F
F
50
=0.5 x I
=0.5 x I
/dt (typical values)
150
I
150
RM
Q
RR
F(AV)
F(AV)
200
200
S
factor
F
/dt (typical values)
dI /dt(A/µs)
dI /dt(A/µs)
F
250
250
F
t
t
I
I
RR
RR
F
F
75
= I
= I
F(AV)
F(AV)
300
300
I
F
= 2 x I
T (°C)
j
F(AV)
350
350
I
F
= 2 x I
Reference: T
100
I
STTH6112TV
400
400
F
= I
V
F(AV)
I
F
R
F(AV)
I
= I
=600V
F
=0.5 x I
F(AV)
j
=125°C
450
450
F(AV)
500
500
125