BAS70 STMicroelectronics, BAS70 Datasheet - Page 3

• Manufacturer Part Number: BAS70
• Description: Low capacitance, low series inductance and resistance Schottky diodes
• Manufacturer: STMicroelectronics

BAS70
Figure 1.
Figure 3.
Figure 5.
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
1.E+02
1.E+01
1.E+00
10.0
1.E-01
1.E-02
1.E-03
1.0
0.1
0.00
0.1
P(W)
0
0.01
Average forward power dissipation
versus average forward current
Reverse leakage current versus
reverse applied voltage
(typical values)
Junction capacitance versus
reverse applied voltage
(typical values)
10
0.02
d=0.05
0.03
20
1.0
d=0.1
0.04
Tj=150 °C
Tj=85 °C
Tj=25 °C
V
d=0.2
30
R
(V)
I
F(AV)
0.05
(A)
0.06
40
V
10.0
R
(V)
d=0.5
0.07
50
d
=tp/T
V
0.08
OSC
F=1 MHz
Tj=25 °C
=30 mV
T
60
0.09
tp
RMS
Doc ID 12563 Rev 2
d=1
100.0
0.10
70
Figure 2.
Figure 4.
Figure 6.
1.E+02
1.E+01
1.E+00
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-01
0
0.0
0
d
V
Tj=150 °C
=tp/T
R
=50 V
Average forward current versus
ambient temperature (δ = 1)
Reverse leakage current versus
junction temperature
(typical values)
Forward voltage drop versus
forward current (typical values)
25
0.5
T
25
tp
Tj=85°C
Tj=85°C
1.0
50
Tj=-40 °C
Tj=-40 °C
50
1.5
T
amb
75
V
(°C)
T
75
FM
j
(°C)
(V)
2.0
100
100
2.5
Characteristics
125
125
3.0
150
150
3.5
3/14