STPS41L30C STMicroelectronics, STPS41L30C Datasheet - Page 2

• Manufacturer Part Number: STPS41L30C
• Description: Low Drop Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STPS41L30CG / STPS41L30CT / STPS41L30CR
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation :
P = 0.27 x I
Fig. 1: Conduction losses versus average current.
11
10
Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
2/6
9
8
7
6
5
4
3
2
1
0
0.01
Symbol
Symbol
0.1
R
Tj(diode 1) = P(diode1) x R
0
R
PF(av)(W)
0.01
1
V
th(j-c)
I
th(c)
P
R
P
F
ARM
ARM p
*
*
(1µs)
(t )
F(AV)
0.1
Junction to case
Coupling
5
= 0.05
Reverse leakage current
Forward voltage drop
+ 0.0055 I
= 0.1
Parameter
10
1
IF(av)(A)
t (µs)
p
= 0.2
F
2
(RMS)
th(j-c)
10
15
(Per diode) + P(diode 2) x R
= 0.5
Parameter
100
20
Tj = 25°C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Tj = 25 C
Tj = 125°C
=tp/T
T
= 1
Tests Conditions
1000
tp
25
Fig. 2: Average forward current versus ambient
temperature ( = 0.5).
25
20
15
10
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
5
0
1
0
V
I
I
I
I
0
F
F
F
F
IF(av)(A)
0
P
R
= 20 A
= 20 A
= 40 A
= 40 A
ARM
P
= V
=tp/T
ARM p
Per diode
th(c)
(25°C)
RRM
T
(t )
25
Total
25
tp
Rth(j-a)=50°C/W
50
50
Min.
Rth(j-a)=Rth(j-c)
Tamb(°C)
T (°C)
j
75
75
Typ.
0.35
0.47
170
Value
1.5
0.8
0.1
100
100
Max.
0.48
0.38
0.57
0.49
350
1.5
125
125
Unit
Unit
C/W
mA
mA
V
150
150