STPS30170C STMicroelectronics, STPS30170C Datasheet - Page 3

• Manufacturer Part Number: STPS30170C
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS30170C

• Insulated Package: TO-220FPAB
• Insulating Voltage: 2000 V DC
• Capacitance: 45 pF

Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure
derating versus pulse duration
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, TO-247, D
0.001
225
200
175
150
125
100
14
12
10
0.01
75
50
25
8
6
4
2
0
1.E-03
0.1
0
0.01
0
1
P
P
1
ARM
I
M
ARM p
2
(1µs)
(t )
3:
3
d
0.1
=0.5
t
4
Normalized
5
1.E-02
d=0.05
6
7
1
I
F(AV)
8
t (µs)
d=0.1
p
(A)
9
10 11 12 13 14 15 16 17 18
10
avalanche
d=0.2
t(s)
1.E-01
TO-220AB, TO -247 & D²PAK
d=0.5
100
d
=t /T
p
T
T
T
C
T
C
C
=125°C
=50°C
=75°C
power
2
PAK)
d=1
t
1.E+00
p
1000
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
Figure
derating versus junction temperature
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
18
16
14
12
10
140
130
120
110
100
1.2
0.8
0.6
0.4
0.2
8
6
4
2
0
90
80
70
60
50
40
30
20
10
1.E-03
1
0
0
0
25
P
P
ARM
d
ARM p
=t /T
I
M
p
(25°C)
25
(t )
T
4:
d
50
=0.5
t
t
R
p
th(j-A)
Normalized
=15 °C/W
50
1.E-02
75
75
T (°C)
j
T
100
amb
(TO-220FPAB)
(TO-220FPAB)
100
R
R
t(s)
R
R
th(j-a)
th(j-a)
avalanche
th(j-a)
th(j-a)
(°C)
=R
=R
1.E-01
=R
=R
th(j-c)
th(j-c)
th(j-c)
th(j-c)
(TO-220AB, TO -247 & D²PAK)
(TO-220AB, TO -247 & D²PAK)
125
STPS30170C
125
TO-220FPAB
150
T
T
C
T
=125°C
C
C
=75°C
=50°C
power
1.E+00
150
175
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