STPS50U100C STMicroelectronics, STPS50U100C Datasheet - Page 2

• Manufacturer Part Number: STPS50U100C
• Description: Schottky Barrier, Power Schottky
• Manufacturer: STMicroelectronics

Characteristics
1
Table 2.
1.
Table 3.
When the diodes 1 and 2 are used simultaneously:
Δ
Table 4.
To evaluate the conduction losses use the following equation: P = 0.475 x I
2/8
Symbol
Symbol
Symbol
I
R
T
V
F(RMS)
R
I
I
F(AV)
T
th (j-c)
j
FSM
(diode 1) = P(diode1) x R
RRM
th (c)
V
I
T
dPtot
stg
R
dTj
F
j
<
Repetitive peak reverse voltage
Forward rms current
Average forward current, δ = 0.5
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Junction to case
Coupling
Reverse leakage current
Forward voltage drop
Rth(j-a)
1
Characteristics
Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Thermal resistance
Static electrical characteristics
condition to avoid thermal runaway for a diode on its own heatsink
Parameter
th(j-c)
(Per diode) + P(diode2) x R
Parameter
Parameter
Doc ID 16603 Rev 2
T
T
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
j
j
= 125 °C
= 125 °C
(1)
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 25 °C
Tests conditions
V
V
I
I
I
T
T
t
F
F
F
p
R
R
C
C
= 5 A
= 15 A
= 25 A
= 10 ms, half sine-wave
= 70 V
= V
= 120 °C
= 105 °C
th(c)
RRM
Per diode
Per device
Per diode
Per device
Min.
-
-
-
-
-
-
-
-
-
-
F(AV)
+ 0.009 I
Typ.
0.48
0.38
0.58
0.54
0.67
0.64
15
10
30
15
-65 to + 150
Value
Value
0.45
100
250
150
1.3
0.9
50
25
50
F
STPS50U100C
Max.
0.73
2
200
0.7
40
(RMS)
-
-
-
-
-
-
°C/W
°C/W
Unit
Unit
Unit
mA
mA
µA
µA
°C
°C
V
A
A
A
V