STPS15SM80C STMicroelectronics, STPS15SM80C Datasheet - Page 2

• Manufacturer Part Number: STPS15SM80C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS15SM80C

• Insulated Voltage: 2000 V
• Package Capacitance: 45 pF

1
2/11
Characteristics
Table 2.
1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the
2. See
3.
Table 3.
When the two diodes 1 and 2 are used simultaneously:
ΔT
Symbol
Symbol
P
V
V
I
R
V
F(RMS)
I
R
ARM
ARM
ASM
I
j
F(AV)
T
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
(diode 1) = P(diode 1) x R
FSM
th(j-c)
RRM
th(c)
T
dPtot
stg
dTj
j
(1)
(2)
(2)
Figure 13
<
Repetitive peak reverse voltage
Forward rms current
Average forward current,
δ = 0.5
Surge non repetitive
forward current
Repetitive peak avalanche power
Maximum repetitive peak
avalanche voltage
Maximum single pulse
peak avalanche voltage
Storage temperature range
Maximum operating junction temperature
Junction to case
Coupling
Rth(j-a)
1
Absolute ratings (limiting values, per diode, at T
otherwise specified)
Thermal parameters
condition to avoid thermal runaway for a diode on its own heatsink
th(j-c)
Doc ID 018737 Rev 1
(Per diode) + P(diode 2) x R
Parameter
TO-220AB,
I
TO-220FPAB
t
t
t
Parameter
2
p
p
p
PAK, D
= 10 ms sinusoidal
< 1 µs, T
< 1 µs, T
TO-220AB
I
TO-220FPAB
TO-220AB
I
TO-220FPAB
2
2
PAK, D
PAK, D
2
PAK
j
j
< 150 °C, I
< 150 °C, I
(3)
2
2
T
T
T
T
T
PAK
PAK
c
c
c
c
j
= 25 °C, t
= 155 °C
= 150 °C
= 140 °C
= 115 °C
AR
AR
per diode
total
per diode
total
< 12 A
< 12 A
p
= 1 µs
th(c)
Per diode
Per device
Per diode
Per device
T
c
amb
= 25 °C
= 25 °C unless
-65 to +175
Value
3.60
3.10
1.88
5.90
4.75
0.65
Value
4000
150
100
100
175
7.5
7.5
80
30
15
15
°C/W
°C/W
Unit
Unit
°C
°C
W
V
A
A
A
V
V