STTH2R02-Y STMicroelectronics, STTH2R02-Y Datasheet - Page 2

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STTH2R02-Y

Manufacturer Part Number
STTH2R02-Y
Description
Automotive Ultrafast recovery diode
Manufacturer
STMicroelectronics
Datasheet

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Characteristics
1
2/8
Characteristics
Table 2.
Table 3.
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.68 x I
Symbol
Symbol
I
V
F(RMS)
I
V
Symbol
I
I
I
F(AV)
T
FRM
FSM
R
R
RRM
F
T
stg
(1)
(2)
th(j-c)
j
Reverse leakage current
Forward voltage drop
Repetitive peak reverse voltage
Repetitive peak forward current
Forward rms current
Average forward current, δ = 0.5
Surge non repetitive forward current
Storage temperature range
Operating junction temperature range
F(AV)
p
p
Absolute ratings (limiting values at T
Thermal parameters
Static electrical characteristics
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
Junction to case
+ 0.06 I
Parameter
F
2
(RMS)
Doc ID 17934 Rev 1
Parameter
Parameter
T
T
T
T
T
T
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 25 °C
= 100 °C
= 150 °C
Test conditions
t
T
t
p
p
c
V
I
I
F
F
= 5 µs, F = 5 kHz
= 10 ms Sinusoidal
j
= 90 °C
R
= 6 A
= 2 A
= 25 °C, unless otherwise specified)
= V
RRM
Min.
-
-
-
-
-
-
-65 to +175
-40 to +175
Typ.
0.89
0.76
0.70
Value
2
-
-
Value
30
200
60
60
75
2
STTH2R02-Y
Max.
1.20
0.85
0.80
1.0
20
3
°C/W
Unit
Unit
Unit
°C
°C
V
A
A
A
A
µA
V

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