BF908 NXP Semiconductors, BF908 Datasheet - Page 6

• Manufacturer Part Number: BF908
• Description: Depletion type Field-Effect Transistor in a plastic SOT143 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 1 Scattering parameters
Table 2 Noise data
(MHz)
V
V
V
V
1000
1000
Dual-gate MOS-FETs
DS
100
200
300
400
500
600
700
800
900
DS
100
200
300
400
500
600
700
800
900
DS
DS
f
50
50
= 8 V; V
= 8 V; V
= 8 V; V
= 8 V; V
(MHz)
MAGNITUDE
800
800
f
(ratio)
G2-S
G2-S
G2-S
G2-S
0.998
0.994
0.979
0.962
0.939
0.914
0.892
0.865
0.837
0.785
0.998
0.994
0.976
0.957
0.934
0.907
0.885
0.851
0.826
0.797
0.773
0.811
= 4 V; I
= 4 V; I
= 4 V; I
= 4 V; I
s
11
D
D
D
D
ANGLE
= 10 mA; T
= 15 mA; T
= 10 mA; T
= 15 mA; T
(deg)
10.4
20.8
30.3
40.1
49.1
57.1
64.4
71.6
10.9
21.6
31.7
41.7
51.1
59.1
66.8
73.9
78.1
84.5
80.7
87.0
5.1
5.3
F
(dB)
1.50
1.50
MAGNITUDE
min
amb
amb
amb
amb
(ratio)
3.537
3.502
3.450
3.318
3.234
3.093
2.912
2.774
2.616
2.479
3.329
3.983
3.943
3.878
3.722
3.614
3.446
3.240
3.072
2.891
2.733
2.569
= 25 C.
= 25 C.
= 25 C.
= 25 C.
Rev. 03 - 14 November 2007
s
21
ANGLE
(deg)
167.7
173.5
154.9
143.7
131.9
120.7
101.0
173.4
167.5
154.7
143.3
131.6
120.4
100.9
110.9
111.1
91.4
81.9
91.3
81.9
72.5
72.8
(ratio)
0.720
0.700
MAGNITUDE
(ratio)
0.001
0.001
0.003
0.004
0.005
0.006
0.005
0.005
0.004
0.004
0.003
0.001
0.001
0.003
0.004
0.005
0.006
0.005
0.005
0.004
0.004
0.004
opt
s
12
(deg)
56.7
59.2
ANGLE
(deg)
108.0
102.9
98.2
88.8
74.6
69.5
65.6
64.4
63.1
65.2
70.8
87.4
95.5
93.6
74.3
70.0
63.5
62.2
59.6
64.8
67.8
85.0
BF908; BF908R
MAGNITUDE
(ratio)
0.996
0.994
0.987
0.983
0.980
0.974
0.969
0.966
0.965
0.965
0.966
0.994
0.991
0.984
0.979
0.975
0.969
0.964
0.961
0.959
0.958
0.958
Product specification
0.580
0.520
s
r
22
n
6 of 9
ANGLE
(deg)
13.9
18.5
22.8
27.0
31.2
35.4
39.4
43.7
14.2
18.8
23.2
27.4
31.6
35.9
40.0
44.2
2.4
4.9
9.5
2.4
5.0
9.7