BF1208D NXP Semiconductors, BF1208D Datasheet - Page 17

• Manufacturer Part Number: BF1208D
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1208D_1
Product data sheet
8.2.2 Scattering parameters for amplifier B
8.2.3 Noise data for amplifier B
Table 12.
V
Table 13.
V
unless otherwise specified.
f
(MHz)
40
100
200
300
400
500
600
700
800
900
1000
f (MHz)
400
800
DS(B)
DS(B)
= 5 V; V
= 5 V; V
s
Magnitude
(ratio)
0.9830
0.98257
0.97956
0.97446
0.96849
0.96112
0.95238
0.94282
0.93319
0.92326
0.91325
11
Scattering parameters for amplifier B
Noise data for amplifier B
G2-S
G2-S
= 4 V; I
= 4 V; I
NF
1.1
1.4
Angle
(deg)
min
3.09
7.62
15.00 2.90869
22.33 2.86877
29.56 2.82073
36.62 2.75891
43.55 2.68790
50.37 2.61038
56.94 2.52719
63.22 2.44054
69.31 2.35036
Rev. 01 — 16 May 2007
D(B)
D(B)
(dB)
= 15 mA; V
= 15 mA; V
s
Magnitude
(ratio)
2.96410
2.92951
21
(ratio)
0.72
0.68
opt
DS(A)
DS(A)
Angle
(deg)
176.88 0.00070
171.69 0.00176
163.43 0.00339
155.20 0.00501
147.13 0.00663
139.15 0.00820
131.26 0.00967
123.50 0.01110
115.92 0.01250
108.46 0.01379
101.13 0.01506
= 0 V; V
= 0 V; V
s
Magnitude
(ratio)
G1-S(A)
G1-S(A)
12
Dual N-channel dual gate MOSFET
(deg)
22.83
46.42
= 0 V; T
= 0 V; T
Angle
(deg)
87.02
86.41
83.66
81.33
79.12
76.85
74.48
72.29
70.11
67.93
65.65
amb
amb
= 25 C; typical values.
= 25 C; typical values;
s
Magnitude
(ratio)
0.9920
0.99190
0.99064
0.98894
0.98688
0.98454
0.98181
0.97880
0.97585
0.97175
0.96801
BF1208D
22
© NXP B.V. 2007. All rights reserved.
r
0.66
0.64
n
( )
Angle
(deg)
17 of 22
1.22
3.22
6.42
9.59
12.74
15.88
19.02
22.13
25.20
28.30
31.40